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P6KE150A-G

Description
ESD Suppressors / TVS Diodes 600W, VRWM=150V
CategoryDiscrete semiconductor    diode   
File Size97KB,4 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Environmental Compliance
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P6KE150A-G Overview

ESD Suppressors / TVS Diodes 600W, VRWM=150V

P6KE150A-G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompliant
Breakdown voltage nominal value150 V
Maximum clamping voltage207 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage128 V
surface mountNO
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
600W Transient Voltage Suppressor
P6KE-G Series
Breakdown Voltage: 6.8 to 600 Volts
Peak Pulse Power: 600 Watts
RoHS Device
Features
- Glass passivated chip.
- 600W peak pulse power capability with a 10/1000µs
waveform, repetitive rate (duty cycle):0.01%
- Low leakage.
- Uni and Bidirectional unit.
- Excellent clamping capability.
- Very fast response time.
- UL recognized file # E349157
-
Range:
P6KE6.8(C)A thru. P6KE47(C)A
R
DO-15
1.000(25.40)
MIN.
0.033(0.84)
DIA.
0.027(0.71)
0.300(7.63)
0.230(5.85)
Mechanical Data
-Case: Molded plastic DO-15.
-Epoxy: UL 94V-0 rate flame retardant.
-Lead: Solderable per MIL-STD-202,
method 208 guranteed.
-Polarity: Color band denotes cathode end
except Bipolar.
-Monuting position: Any.
-Weight: 0.402 gram (approx.)
1.000(25.40)
MIN.
0.142(3.61)
DIA.
0.102(2.60)
Dimensions in inches and (millimeter)
Maximum Ratings
(T
A
=25°C unless otherwise noted)
Parameter
Peak power dissipation with a 10/1000μs
waveform (Note 1)
Peak pulse current with a 10/1000μs waveform
(Note 1)
Power dissipation on infinite heatsink at T
L
=75°C
Peak forward surge current, 8.3ms single
half sine-wave unidirectional only
(Note 2)
Maximum instantaneous forward voltage at
50 A for unidirectional only (Note 3)
Operating junction and storage
temperature range
Symbol
P
PP
Value
600
Unit
W
I
PP
P
D
See Next Table
5.0
A
W
I
FSM
100
A
V
F
3.5/5.0
V
T
J
, T
STG
-55 to +150
°C
NTOES:
(1) Non-repetitive current pulse per fig.5 and derated above T
A
=25°C per fig.1
(2) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum
(3) V
F
<3.5V for devices of V
BR
<200V and V
F
<5.0V for devices of V
BR
>201V
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTV06
REV:E
Page 1
Comchip Technology CO., LTD.

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