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2SC5998

Description
Silicon NPN Epitaxial High Frequency Medium Power Amplifier
File Size93KB,11 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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2SC5998 Overview

Silicon NPN Epitaxial High Frequency Medium Power Amplifier

2SC5998
Silicon NPN Epitaxial
High Frequency Medium Power Amplifier
REJ03G0169-0100Z
Rev.1.00
Apr.20.2004
Features
High Transition Frequency
f
T
= 11 GHz typ.
High gain and Excellent Efficiency
Maximum Available Gain (MAG) = +22 dB typ. at V
CE
= 3.6 V, I
C
= 100 mA, f = 500 MHz
Power Added Efficiency (PAE) = 70% typ. at Pin=+16 dBm, f = 500 MHz
High Collector to Emitter Voltage
V
CEO
= 5 V
Ideal for up to 2GHz applications.
e.g FRS(Family Radio Service) Power Amplifier ,
GMRS (General Mobile Radio Service) Driver Amplifier
Outline
MPAK
3
1
2
1. Collector
2. Base
3. Emitter
Note:
Marking is “YC-”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Ratings
13
5
1.5
500
700
note
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Note: Value on PCB ( FR-4 : 25 x 30 x 1.0mm Double side )
Rev.1.00, Apr.20.2004, page 1 of 10

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