*R
oH
V E S CO
AV R M
AI SIO PL
LA N IA
BL S NT
E
Features
n
Fast acting
n
Balanced
n
Stable breakdown throughout life
n
Designed to operate with TBU devices
®
Applications
n
Telecommunications
n
Industrial electronics
n
Avionics
n
RoHS compliant* versions available
PL
IA
N
OM
T
Characteristics
F
RE
E
Test Methods per ITU-T K.12, IEEE C62.31 and IEC 61643-311 GDT standards.
Characteristic
Initial DC Sparkover
(100 V/s)
Typical
LE
AD
*R
oH
S
2020 T-Series - Fast Acting 3-Electrode Miniature GDT
C
2020-15T
Model No.
2020-23T
2020-42T
150 V
60 V
Ro VE LEA
HS RS D
C ION FRE
OM S E
PL AR
IA E
NT
*
230 V
180 V
650 V
420 V
360 V
850 V
Minimum DC Sparkover
(100 V/s)
Throughout Service Life
Maximum Impulse Sparkover
(1)
(5 kV/µs)
Throughout Service Life
(1)
500 V
Impulse Sparkover voltage is defined as typical values of distribution.
Impulse Transverse Delay ..................1000 V/µs ............................................................................... < 75 ns
Insulation Resistance (IR) ..................50 V / 100 V............................................................................ > 10
9
Ω
Glow Voltage ......................................10 mA ..................................................................................... ~ 70 V
Arc Voltage .........................................>1 A ........................................................................................ ~ 10 V
Glow-Arc Transition Current ............................................................................................................... < 0.5 A
Capacitance........................................1 MHz ..................................................................................... < 2 pF
DC Holdover Voltage (Network Applied per ITU-T K.12)
2020-15T .......................................52 V ........................................................................................ < 150 ms
2020-23T .......................................80 V ........................................................................................ < 150 ms
2020-42T .......................................135 V ...................................................................................... < 150 ms
Service Life
(2)
......................................8/20 µs, 10 kA......................................................................... 1 operation
10/1000 µs, 1 kV, 200 A.......................................................... 100 operations
(3)
2/10 µs, 6 kV, 2000 A.............................................................. 10 operations
(3)
10/700 µs, 6 kV, 300 A............................................................ 50 operations
(3)
8/20 µs, 500 A, 1.2/50 µs, 500 V ............................................ 150 operations
(3)
600 V, 10 Arms, 0.2 sec.......................................................... 10 operations
600 Vrms, 0.5 A - 60 A ............................................................ Fail-Short activates
(4)
230 Vrms, 0.5 A-25 A.............................................................. Fail-Short activates
(4)
Operating Temperature Range ........................................................................................................... -40 °C to +90 °C
Storage Temperature Range .............................................................................................................. -55 °C to +90 °C
Moisture Sensitivity Level ................................................................................................................... 1
ESD Classification (HBM) ................................................................................................................... 6
Notes:
(2)
The rated discharge current is the total current equally divided between each line to ground.
(3)
Surge polarity should be reversed between consecutive surges (+,-,+,-)
(4)
Applies only to GDT with optional Fail-Short. GDT operates and will survive with Fail-Short activation.
• At delivery AQL 0.65 Level II, DIN ISO 2859.
• Models with the optional Fail-Short assembly activate at low temperature (215 °C – 217 °C) when required. These models are designed to be soldered either
manually or using a selective soldering process that does not exceed 210 °C, below the temperature that the Fail-Short assembly would activate.
Applications
Port Protection
CanBus
RS232
RS422
RS485
RS485
SDI
VDSL
GDT Device P/N
2020-23T
2020-23T
2020-23T
2020-23T
2020-42T
2020-23T
2020-15T
TBU
®
Device P/N
TBU-CA065-100-WH
TBU-CA065-200-WH
TBU-CA065-200-WH
TBU-CA065-200-WH
TBU-CA085-200-WH
TBU-CA065-100-WH
TBU-CA050-500-WH
Typical Part Marking
MANUFACTURER'S
TRADEMARK
B
XX XX
20-XXXV
DATE CODE
• FIRST TWO DIGITS = MONTH
• NEXT TWO DIGITS = YEAR
VOLTAGE
“TBU” is a registered trademark of Bourns, Inc. in the United States and other countries.
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
(REVERSE MARKED
WITH RED INK)
2020 T-Series - Fast Acting 3-Electrode Miniature GDT
How to Order
Packaging Specifications
2020 - xxT - x x F LF
Model Number
Designator
Voltage
(Divided by 10)
15 = 150 V
23 = 230 V
42 = 420 V
2020-xxT-A1
2020-xxT-C
2020-xxT-C2
2020-xxT-C3
2020-xxT-C4
Model
Bulk (Bag)
250
Standard Packaging Quantity
Tray
100
100
100
100
Box
1000
1000
1000
1000
1000
Leads
A = None/Cassette Applications
C = 1 mm Dia. Leads/Through-hole
Lead Shape
(See Product Dimension Drawings)
Fail-Short Option
Blank = Standard Product
F = With Fail-Short Mechanism
RoHS Compliant Option
Blank = Standard Product
LF = RoHS Compliant Product
Model 2020-xxT ships in standard bulk pack, 100 pcs./tray.
Switch-Grade Fail-Short Device Shorting Curve 2020-xxT-XF
30.0
20.0
Current (A) (ELTGS)
10.0
5.0
ELTGS = Each Line to Ground Simultaneously
NOTE: When using a GDT fail-short device, it is
imperative that all components associated and
connected to the GDT with failsafe be tested in their
respective completely integrated environment
(finished product) to assure desired operation.
1.0
0.5
0.1
1
10
100
1000
Seconds
REV. J 03/18
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
Analog electronics
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