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CMXESD70-4 TR

Description
ESD Suppressors / TVS Diodes 4-Line Array Low Cap 70Vrrm 70Vr 200IF
CategoryCircuit protection   
File Size515KB,4 Pages
ManufacturerCentral Semiconductor
Environmental Compliance
Download Datasheet Parametric View All

CMXESD70-4 TR Overview

ESD Suppressors / TVS Diodes 4-Line Array Low Cap 70Vrrm 70Vr 200IF

CMXESD70-4 TR Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerCentral Semiconductor
Product CategoryESD Suppressors / TVS Diodes
RoHSDetails
Vesd - Voltage ESD Contact8 kV
Vesd - Voltage ESD Air Gap15 kV
PolarityUnidirectional
Number of Channels4 Channel
Termination StyleSMD/SMT
Working Voltage70 V
Cd - Diode Capacitance0.77 pF
Package / CaseSOT-26
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingReel
Factory Pack Quantity3000
Vf - Forward Voltage1.07 V
CMXESD70-4
SURFACE MOUNT SILICON
LOW CAPACITANCE
ESD PROTECTION
4-LINE DIODE ARRAY
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMXESD70-4 is a
4-line silicon diode array packaged in the SOT-26
surface mount case. This device, with its low capacitance,
is designed to protect four high speed data or transmission
lines from over-voltage transients and ESD damage.
MARKING CODE: CTV70
SOT-26 CASE
APPLICATIONS:
USB 2.0 power and data line protection
HDMI
DVI
Ethernet ports
FEATURES:
• Low capacitance
• Protects four I/O lines
• Protects supply voltage rail
MAXIMUM RATINGS:
(TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
ESD Voltage (IEC 61000-4-2, Air)
ESD Voltage (IEC 61000-4-2, Contact)
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
IR
IR
IR
BVR
VF
VF
VF
VF
CJ
CJ
SYMBOL
VRRM
VR
IF
IFRM
IFSM
IFSM
VESD
VESD
TJ, Tstg
Θ
JA
70
70
200
450
2.0
0.5
15
8.0
-55 to +150
556
UNITS
V
V
mA
mA
A
A
kV
kV
°C
°C/W
CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
TYP
MAX
VR=3.3V
12
30
VR=70V
VR=70V, TJ=150°C
IR=100μA
IF=1.0mA
IF=10mA
IF=50mA
IF=150mA
VR=0V, f=1.0MHz (I/O to I/O)
VR=0V, f=1.0MHz (I/O to GND)
70
0.61
0.74
0.88
1.07
0.45
0.77
0.715
0.855
1.0
1.25
0.9
1.0
0.03
55
1.0
100
UNITS
nA
μA
μA
V
V
V
V
V
pF
pF
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