EMF5
Transistors
!
Absolute maximum ratings
(Ta=25°C)
Tr1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Limits
Symbol
−15
V
CBO
−12
V
CEO
−6
V
EBO
−500
I
C
Collector current
−1.0
I
CP
150(TOTAL)
P
C
Power dissipation
Tj
150
Junction temperature
Tstg
−55~+150
Range of storage temperature
Unit
V
V
V
mA
A
mW
°C
°C
∗1
∗2
∗1
Single pulse P
W
=1ms
∗2
120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
DTr2
Limits
Parameter
Symbol
50
V
CC
Supply voltage
−10~+40
V
IN
Input voltage
100
I
C
Collector current
30
I
O
Output current
150(TOTAL)
P
C
Power dissipation
Tj
150
Junction temperature
Tstg
−55~+150
Range of storage temperature
∗1
Characteristics of built-in transistor.
∗2
120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Unit
V
V
mA
mA
mW
°C
°C
∗1
∗2
!
Electrical characteristics
(Ta=25°C)
Tr1
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−12
−15
−6
−
−
−
270
−
−
Typ.
−
−
−
−
−
−100
−
260
6.5
Max.
−
−
−
−100
−100
−250
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
I
C
=−1mA
I
C
=−10µA
I
E
=−10µA
V
CB
=−15V
V
EB
=−6V
I
C
=−200mA,
I
B
=−10mA
V
CE
=−2V,
I
C
=−10mA
V
CE
=−2V,
I
E
=10mA,
f=100MHz
V
CB
=−10V,
I
E
=0mA,
f=1MHz
DTr2
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
∗Characteristics
of built-in transistor.
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
f
T
R
1
R
2
/R
1
Min.
−
3.0
−
−
−
68
−
32.9
0.8
Typ.
−
−
100
−
−
−
250
47
1.0
Max.
0.5
−
300
180
500
−
−
61.1
1.2
Unit
V
V
mV
µA
nA
−
MHz
kΩ
−
Conditions
V
CC
=5V,
I
O
=100µA
V
O
=0.3V,
I
O
=2mA
V
O
=10mA,
I
I
=0.5mA
V
I
=5V
V
CC
=50V,
V
I
=0V
V
O
=5V,
I
O
=5mA
−
−
V
CE
=10V,
I
E
=−5mA,
f=100MHz
∗
2/4
EMF5
Transistors
!
Electrical characteristic curves
Tr1
1000
COLLECTOR CURRENT : I
C
(mA)
V
CE
=2V
Pulsed
DC CURRENT GAIN : h
FE
1000
Ta=125°C
Ta=25°C
Ta=−40°C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
V
CE
=2V
Pulsed
1000
Ta=25°C
Pulsed
100
100
100
I
C
/I
B
=50
I
C
/I
B
=20
°
C
Ta=
−4
0°
C
Ta=25
°C
Ta=12
5
10
10
10
I
C
/I
B
=10
1
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
1000
1
1
10
100
1000
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 DC current gain vs.
collector current
Fig.3 Collector-emitter saturation voltage
vs. collector current (
Ι
)
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
100
Ta=25°C
Ta=125°C
1000
Ta=25°C
Ta=−40°C
TRANSITION FREQUENCY : f
T
(MHz)
I
C
/I
B
=20
Pulsed
BASER SATURATION VOLTAGE : V
BE (sat)
(mV)
1000
10000
I
C
/I
B
=20
Pulsed
1000
V
CE
=2V
Ta=25°C
Pulsed
100
Ta=125°C
Ta=−40°C
10
100
10
1
1
10
100
1000
10
1
10
100
1000
1
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
E
(mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current (
ΙΙ
)
Fig.5 Base-emitter saturation voltage
vs. collector current
Fig.6 Gain bandwidth product
vs. emitter current
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
1000
I
E
=
0A
f
=
1MHz
Ta
=
25°C
100
Cib
10
Cob
1
0.1
1
10
100
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
3/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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