EN29LV641H/L EN29LV640U
EN29LV641H/L EN29LV640U
64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only
Uniform Sector Flash Memory
FEATURES
•
Single power supply operation
- Full voltage range: 2.7 to 3.6 volts for read,
erase and program operations
•
Low power cons
umption (typical values at 5
MHz)
- 9 mA typical active read current
- 20 mA typical program/erase current
- Less than 1
µA
current in standby or automatic
sleep mode.
Software features:
•
Sector Group Protection
- Provide locking of sectors to prevent program
or erase operations within individual sectors
- Additionally, temporary Sector Group
Unprotect allows code changes in previously
protected sectors.
•
Standard DATA# polling and toggle bits
feature
•
Unlock Bypass Program command supported
•
Sector Erase Suspend / Resume modes:
Read and program another Sector during
Sector Erase Suspend Mode
•
Support JEDEC Common Flash Interface
(CFI).
Hardware features:
•
RESET# hardware reset pin
- Hardware method to reset the device to read
mode.
•
WP# input pin
- Write Protect (WP#) function allows
protection of first or last 32K-word sector,
regardless of previous sector protect status
•
ACC input pin
- Acceleration (ACC) function provides
accelerated program times for higher
throughput for manufacturing.
•
JEDEC standards compatible
- Pinout and software compatible with single-
power supply Flash standard
•
Manufactured on 0.18μm process
technology
•
Flexible Sector Architecture:
- One hundred and twenty-eight 32K-Word
sectors.
•
Minimum 100K program/erase endurance
cycles.
•
-
-
-
High performance for program and erase
Word program time: 8µs typical
Sector Erase time: 500ms typical
Chip Erase time: 64s typical
•
Package Options
- 48-pin TSOP
- 63 ball 11mm x 12mm FBGA
GENERAL DESCRIPTION
The EN29LV641H/L / EN29LV640U is a 64-Megabit (4,194,304x16), electrically erasable, read/write
non-volatile flash memory. Any word can be programmed typically in 8µs. This device is entirely
command set compatible with the JEDEC single-power-supply Flash standard.
The EN29LV641H/L / EN29LV640U is designed to allow either single Sector or full Chip erase
operation, where each Sector Group can be protected against program/erase operations or
temporarily unprotected to erase or program. The device can sustain a minimum of 100K
program/erase cycles on each Sector.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2005 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2005/06/27
EN29LV641H/L EN29LV640U
CONNECTION DIAGRAMS
Note:
No RY/BY# pin for TSOP package , V
IO
should be tied directly to VCC.
Note:
No WP# pin for FBGA package V
IO
should be tied directly to VCC.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
3
©2005 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2005/06/27
EN29LV641H/L EN29LV640U
TABLE 1. PIN DESCRIPTION
LOGIC DIAGRAM
Pin Name
A21-A0
DQ15-DQ0
CE#
OE#
WE#
WP#
ACC
RY/BY#
RESET#
V
cc
V
IO
V
ss
NC
Function
22 Address inputs
16 Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Hardware Write Protect Input
Acceleration Input
Ready/Busy status output
Hardware Reset Input Pin
Supply Voltage (2.7-3.6V)
Output Buffer Power Supply this pin
should be tied directly to VCC
Ground
Not Connected to anything
Note:
WP# pins are for EN29LV641H/L only.
RY/BY# is available for EN29LV640U only.
A21 – A0
CE#
OE#
WE#
WP#
ACC
RESET#
V
IO
RY/BY#
DQ15 – DQ0
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
4
©2005 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2005/06/27
EN29LV641H/L EN29LV640U
ORDERING INFORMATION
EN29LV641
H
─
90
T
I
P
PACKAGING CONTENT
(Blank) = Conventional
P = Pb Free
TEMPERATURE RANGE
I = Industrial (-40°C to +85°C)
C = Commercial (0°C to +70°C)
PACKAGE
T = 48-pin TSOP
W= 63-Ball Fine Pitch Ball Grid Array (FBGA)
0.80mm pitch, 11mm x 12mm package
SPEED OPTION
See Product Selector Guide and Valid Combinations
SECTOR for WRITE PROTECT (WP#=0)
H = highest address sector protected
L = lowest address sector protected
BASE PART NUMBER
EN29LV641 / EN29LV640U
64 Megabit(4M x 16-Bit) Uniform Sector Flash
Optional Data I/O voltage
3V Read, Erase and Program
PRODUCT SELECTOR GUIDE
Valid Combinations for TSOP Packages
EN29LV641H–90
EN29LV641L–90
EN29LV641H–70R,
EN29LV641L–70R
Vcc
V
cc
= 2.7V-3.6V
TI, TC
V
cc
= 3.0V-3.6V
Valid Combinations for FBGA Packages
EN29LV640U–90
EN29LV640U–70R
WI, WC
Vcc
V
cc
= 2.7V-3.6V
V
cc
= 3.0V-3.6V
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
5
©2005 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2005/06/27
京公网安备 11010802033920号
EEWORLD
