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IMH4A

Description
General purpose (dual digital transistors)
CategoryDiscrete semiconductor    The transistor   
File Size69KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

IMH4A Overview

General purpose (dual digital transistors)

IMH4A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Parts packaging codeSC-74
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresDIGITAL, BUILT IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G6
JESD-609 codee1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
EMH4 / UMH4N / IMH4A
Transistors
General purpose (dual digital transistors)
EMH4 / UMH4N / IMH4A
Features
1) Two DTC114T chips in a EMT or UMT or SMT
package.
External dimensions
(Unit : mm)
EMH4
0.22
(4)
(5)
(6)
(3)
(2)
(1)
Equivalent circuits
EMH4 / UMH4N
(3)
(2)
(1)
1.2
1.6
1pin mark
0.5
IMH4A
(4)
(5)
(6)
R
1
R
1
0.13
ROHM : EMT6
R
1
(4)
(5)
(6)
(3)
Each lead has same dimensions
R
1
(2)
(1)
(4)
(3)
UMH4N
0.2
0.65
1.3
0.65
0.8
1.1
0.95 0.95
1.9
2.9
R
1
=10KΩ
R
1
=10KΩ
0.5 0.5
1.0
1.6
(6)
1.25
Package, marking, and packaging specifications
0.15
2.1
0.7
0.9
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMH4
EMT5
H4
T2R
8000
UMH4N
UMT6
H4
TN
3000
IMH4A
SMT6
H4
T110
3000
ROHM : UMT6
EIAJ : SC-88
0~0.1
0.1Min.
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗1
120mW per element must not be exceeded.
∗2
200mW per element must not be exceeded.
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
50
50
5
100
150(TOTAL)
300(TOTAL)
150
−55
to
+150
Unit
V
V
V
mA
mW
IMH4A
(6)
0.3
(5)
(4)
EMH4 / UMH4N
IMH4A
Pd
Tj
Tstg
∗1
∗2
1.6
2.8
0.15
°C
°C
0.3Min.
0~0.1
ROHM : SMT6
EIAJ : SC-74
(3)
(2)
(1)
(1)
Each lead has same dimensions
Each lead has same dimensions
Rev.A
2.0
(5)
(2)
1/2

IMH4A Related Products

IMH4A EMH4 UMH4N
Description General purpose (dual digital transistors) General purpose (dual digital transistors) General purpose (dual digital transistors)
Is it Rohs certified? conform to - conform to
Maker ROHM Semiconductor - ROHM Semiconductor
Reach Compliance Code compli - compli
Maximum collector current (IC) 0.1 A - 0.1 A
Minimum DC current gain (hFE) 100 - 100
JESD-609 code e1 - e2
Number of components 2 - 2
Polarity/channel type NPN - NPN
surface mount YES - YES
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) - Tin/Copper (Sn/Cu)
Transistor component materials SILICON - SILICON

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