HiPerFAST
TM
IGBT
Lightspeed
TM
Series
IXGA 24N60C
IXGP 24N60C
V
CES
I
C25
V
CE(sat)typ
t
fi
typ
= 600 V
= 48 A
= 2.1 V
= 60 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 110°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 22
Ω
Clamped inductive load, L = 100
µH
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
48
24
96
I
CM
= 48
@ 0.8 V
CES
150
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
TO-220 AB (IXGP)
C (TAB)
G
C E
TO-263 AA (IXGA)
G
E
C (TAB)
G = Gate,
E = Emitter,
Features
C = Collector,
TAB = Collector
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
d
Weight
Mounting torque (M3)
TO-263
TO-220
1.13/10 Nm/lb.in.
2
4
g
g
International standard packages
JEDEC TO-247 and surface
mountable TO-268
High frequency IGBT
High current handling capability
Latest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
High power density
Very fast switching speeds for high
frequency applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
600
2.5
T
J
= 25°C
T
J
= 150°C
5
200
1
±100
2.1
2.5
V
V
µA
mA
nA
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250
µA,
V
GE
= 0 V
= 250
µA,
V
CE
= V
GE
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C110
, V
GE
= 15 V
© 2002 IXYS All rights reserved
98936 7/02)
IXGA 24N60C
IXGP 24N60C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
9
17
1500
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
120
40
55
I
C
= I
C110
, V
GE
= 15 V, V
CE
= 0.5 V
CES
Inductive load, T
J
= 25°C
°
I
C
= I
C110
, V
GE
= 15 V, L = 100
µH,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10
Ω
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 • V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125°C
°
I
C
= I
C110
, V
GE
= 15 V, L = 100
µH
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10
Ω
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 • V
CES
,
higher T
J
or increased R
G
13
17
15
25
75
60
0.24
15
25
0.15
130
110
0.6
140
110
0.36
S
pF
pF
pF
nC
nC
nC
Dim.
Pins:
2 - Collector
4 - Collector
Millimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
1 - Gate
3 - Emitter
Bottom Side
TO-220 AB Outline
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= I
C110
; V
CE
= 10 V,
Pulse test, t
≤
300
µs,
duty cycle
≤
2 %
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.83 K/W
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
TO-263 AA Outline
0.25
K/W
Min. Recommended Footprint
(Dimensions in inches and mm)
1.
2.
3.
4.
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min.
Max.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
14.61
2.29
1.02
1.27
0
0.46
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
10.29
8.13
BSC
15.88
2.79
1.40
1.78
0.38
0.74
Gate
Collector
Emitter
Collector
Botton Side
Inches
Min. Max.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.018
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.015
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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