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RB851Y

Description
0.03 A, 3 V, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size128KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

RB851Y Overview

0.03 A, 3 V, 2 ELEMENT, SILICON, SIGNAL DIODE

RB851Y Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Parts packaging codeSC-75A
package instructionR-PDSO-F4
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.46 V
JESD-30 codeR-PDSO-F4
JESD-609 codee2
Humidity sensitivity level1
Number of components2
Number of terminals4
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Maximum output current0.03 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage3 V
Maximum reverse current0.7 µA
Reverse test voltage1 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Copper (Sn/Cu)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature10
RB851Y
Diodes
Schottky barrier diode
RB851Y
Applications
High frequency detection
External dimensions
(Unit : mm)
Land size figure
(Unit : mm)
0.5
0.22±0.05
0.13±0.05
(3)
Features
1) Ultra small mold type. (EMD4)
2) Low Ct and high detection efficiency.
0.45
1.6±0.1
(4)
1.2±0.1
1.6±0.1
1.0
0½0.1
EMD4
(1)
(2)
Construction
Silicon epitaxial planar
Structure
0.5
1.0±0.1
0.5
0.5±0.05
ROHM : EMD4
JEITA : SC-75A Size
dot (year week factory)
Taping specifications
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.5±0.1
      0
1.75±0.1
0.3±0.1
3.5±0.05
1.65±0.1
5.5±0.2
8.0±0.2
1.65±0.1
1PIN
4.0±0.1
φ0.8±0.1
0½0.1
0.65±0.1
Absolute maximum ratings
(Ta=25°C)
Param eter
Revers e voltage (repetitive peak)
Revers e voltage (DC)
Junction tem perature
Storage tem perature
(*1) Rating of per diode
Sym bol
V
R
I
F
Tj
Ts tg
Lim its
3
30
125
-40 to +125
Unit
V
mA
Electrical characteristics
(Ta=25°C)
Param eter
Forward voltage
Re vers e current
Capacitance between term inal
Sym bol
V
F
I
R
Ct
Min.
-
-
-
Typ.
-
-
0.8
Max.
0.46
0.7
-
Unit
V
µA
pF
I
F
=1m A
V
R
=1V
V
R
=0V , f=1MHz
Conditions
Rev.A
1.65±0.01
1.55
1/2
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