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RSB6.8CS

Description
10 W, BIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size116KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

RSB6.8CS Overview

10 W, BIDIRECTIONAL, SILICON, TVS DIODE

RSB6.8CS Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionR-PDSO-F2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Maximum breakdown voltage7.82 V
Minimum breakdown voltage5.78 V
Breakdown voltage nominal value6.8 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-F2
JESD-609 codee2
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation10 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityBIDIRECTIONAL
Maximum power dissipation0.1 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage3.5 V
Maximum reverse current0.5 µA
Reverse test voltage3.5 V
surface mountYES
technologyZENER
Terminal surfaceTin/Copper (Sn/Cu)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature10
RSB6.8CS
Diodes
ESD Protection diode
RSB6.8CS
Application
ESD Protection, bi direction
External dimensions
(Unit : mm)
0.16±0.05
0.6±0.05
Land size figure
(Unit : mm)
0.55
0.45
Features
1) Ultra small mold type. (VMN2)
2) High reliability.
3)
Bi chip-mounter, automatic mounting
is possible.
0.156
0.35±0.1
0.9±0.05
1.0±0.05
VMN2
Structure
0.37±0.03
Construction
Silicon epitaxial planar
ROHM : VMN2
dot (year week factory) + day
Taping specifications
4±0.1
2±0.05
φ1.55
0.2±0.05
1.75±0.1
3.5±0.05
0.45
1.1±0.05
φ0.5
0.7±0.05
2±0.05
4.0±0.1
0.52
Absolute maximum ratings
(Ta=25°C)
Parameter
Peak pulse power (tp=10×1000us)
Power dissipation
Junction temperature
Storage temperature
Operating temperature
Symbol
Ppk
P
Tj
Tstg
Topor
Limits
10
100
150
-55 to +150
-55 to +150
Unit
W
mW
Electrical characteristics
(Ta=25°C)
Parameter
Zener voltage
Reverse current
Capacitance between terminals
Symbol
V
z
I
R
Ct
Min.
5.78
-
-
Typ.
-
-
15
Max.
7.82
0.5
-
Unit
V
µA
pF
Conditions
I
Z
=1mA
V
R
=3.5V
V
R
=0V , f=1MHz
8.0±0.2
0.5
1/2
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