P036QH06EN datasheet, PDF - EEWORLD Datasheet

P036QH06EN: DescriptionSilicon Controlled Rectifier, 100000mA I(T), 600V V(DRM),; CategoryAnalog mixed-signal IC Trigger device; File Size725KB，6 Pages; ManufacturerIXYS; Related ProductsFound1parts with similar functions to P036QH06EN

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P036QH06EN Overview

Silicon Controlled Rectifier, 100000mA I(T), 600V V(DRM),

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	compli
Nominal circuit commutation break time	10 µs
Critical rise rate of minimum off-state voltage	100 V/us
Maximum DC gate trigger current	100 mA
Maximum DC gate trigger voltage	3 V
Maximum leakage current	10 mA
On-state non-repetitive peak current	600 A
Maximum on-state voltage	2.2 V
Maximum on-state current	100000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-30 °C
Off-state repetitive peak voltage	600 V
surface mount	NO
Trigger device type	SCR
Base Number Matches	1

Part Number	Manufacturer	Description
P036QH06EN	Littelfuse	Silicon Controlled Rectifier, 100000mA I(T), 600V V(DRM),

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