TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
1500 WATT LOW VOLTAGE TRANSIENT
VOLTAGE SUPPRESSOR
Qualified per MIL-PRF-19500/500
DEVICES
LEVELS
1N5907
JAN
JANTX
JANTXV
DESCRIPTION
This unidirectional low voltage Transient Voltage Suppressor (TVS) device for the
1N5907 JEDEC registration has a high Peak Pulse Power rating of 1500 W with
extremely fast response times. The 1N5907 is available in a military qualified version
as described in the Features section herein. It’s most often used for protecting against
transients from inductive switching environments, induced RF effects, or induced
secondary lightning effects as found in surge levels of IEC61000-4-5 described herein.
It’s also very successful in protecting airborne avionics and electrical systems when
low voltage is required. Since their response time is virtually instantaneous, they can
also protect from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
DO-13 (DO-202A)
FEATURES
Unidirectional TVS for thru-hole mounting
Suppresses transients up to 1500 watts @ 10/1000 µs (Figure 1) in less than 100
pico seconds
Low working voltage (V
WM
) of 5 V
Hermetic sealed DO-13 metal package for 1N5907
JAN/TX/TXV military qualification available for 1N5907 per MIL-PRF-
19500/500 by adding JAN, JANTX, or JANTXV prefix, e.g. JANTXV1N5907
Surface mount equivalent packages also available as SMCJ5.0 or SMCG5.0 in
separate data sheet (consult factory for other surface mount options)
T4-LDS-0095 Rev. 2 (101572)
Page 1 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
Protects TTL, ECL, DTL, MOS, MSI, and other integrated circuits requiring 5.0 V or lower power supplies
Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance: Class 1 thru 4
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance: Class 1 thru 4
Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance: Class 2 & 3
1N5907 Inherently radiation hard as described in Microsemi MicroNote 050
MAXIMUM RATINGS
1500 Watts for 10/1000
μs
at lead temperature (T
L
) 25
o
C (See Figs. 1, 2, and 4) with repetition rate of 0.01% or
less*
Operating & Storage Temperatures: -65
o
to +175
o
C for 1N5907
THERMAL RESISTANCE (junction to lead): 50
o
C/W for 1N5907
THERMAL RESISTANCE (junction to ambient): 110
o
C/W for 1N5907
DC Power Dissipation* (1N5907): 1 Watt at T
L
<125
o
C 3/8” (10 mm) from body, or 1 Watt at T
A
≤+65
o
C
when mounted on FR4 PC board as described for thermal resistance junction to ambient
Forward surge current: 200 A for 8.3ms half-sine wave at T
A
= +25
o
C
Solder Temperatures: 260
o
C for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE (1N5907): DO-13 (DO-202AA) welded hermetically sealed metal and glass
FINISH: External metal surfaces are Tin-Lead (Sn-Pb) plated and solderable per MIL-STD-750 method 2026
POLARITY: Polarity indicated by diode symbol or cathode band (cathode connected to case for 1N5907)
MARKING: Part number and polarity symbol
WEIGHT: 1.4 grams. (Approx)
TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number)
See package dimension on last page
* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage
(V
WM
) except for transients that briefly drive the device into avalanche breakdown (V
BR
to V
C
region).
T4-LDS-0095 Rev. 2 (101572)
Page 2 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS @ 25
o
C
JEDEC
Type
No.
Reverse
Standoff
Voltage
V
WM
(NOTE 1)
Volts
Minimum
Breakdown
Voltage
V
(BR)
@ 1 mA
Maximum
Standby
Current
I
D
@ V
WM
μA
Maximum
Clamping
Voltage
V
C
@ I
PP1
(FIG. 3)
Volts
Peak Pulse
Current
I
PP1
(FIG. 3)
Maximum
Clamping
Voltage
V
C
@ I
PP2
(FIG. 3)
Volts
Peak Pulse
Current
I
PP2
(FIG. 3)
Maximum
Clamping
Voltage V
C
@
I
PP3
(FIG. 3)
Volts
Peak Pulse
Current
I
PP3
(FIG. 3)
Volts
Amps
Amps
Amps
1N5907 *
5.0
6.0
300
7.6
30
8.0
60
8.5
120
* Also available in military qualified types with a JAN, JANTX, or JANTXV prefix per MIL-PRF-19500/500.
NOTE 1:
A TVS is normally selected according to the reverse “Standoff Voltage” V
WM
which should be equal to or
greater than the dc or continuous peak operating voltage level.
SYMBOLS & DEFINITIONS
Symbol
V
WM
V
(BR)
Definition
Standoff Voltage: Applied Reverse Voltage to assure a nonconductive condition. (See Note 1 above)
Breakdown Voltage: This is the Breakdown Voltage the device will exhibit at 25
o
C
Maximum Clamping Voltage: The maximum peak voltage appearing across the TVS when subjected to
the peak pulse current in a one millisecond time interval. The peak pulse voltage is the combination of
voltage rise due to both the series resistance and thermal rise and positive temperature coefficient (α
V(BR)
)
Peak Pulse Current: The peak current during the impulse (See Figure 2)
Peak Pulse Power: The pulse power as determined by the product of V
C
and I
PP
Standby Current: The current at the standoff voltage (V
WM
)
Breakdown Current: The current used for measuring Breakdown Voltage (V
(BR)
)
V
C
I
PP
P
PP
I
D
I
(BR)
T4-LDS-0095 Rev. 2 (101572)
Page 3 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
GRAPHS
FIGURE 1
PEAK PULSE POWER VS. PULSE TIME
FIGURE 2
DERATING CURVE
Test wave form
parameters
tr = 10
μs
tp = 1000
μs
FIGURE 3
PULSE WAVEFORM
FIGURE 4
TYPICAL CLAMPING VOLTAGE (V
C
)
VS. PEAK PULSE CURRENT (I
PP
)
T4-LDS-0095 Rev. 2 (101572)
Page 4 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. The major diameter is essentially constant along its length.
4. Within this zone, diameter may vary to allow for lead finishes
and irregularities.
5. Dimension to allow for pinch or seal deformation anywhere
along tubulation.
6. Lead 1 (cathode) shall be electrically connected to the case.
7. In accordance with ASME Y14.5M, diameters are equivalent
to
φx
symbology.
Symbol
BD
BL
BLT
CD
LD
LL
LU
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.215
.235
5.46
5.97
.293
.357
7.44
9.07
.570
14.48
.045
.100
1.14
2.54
.025
.035
0.64
0.89
1.000 1.625 25.40 41.28
.188
4.78
Notes
3
5
4
4
FIGURE 1.
Physical dimensions (DO-13).
T4-LDS-0095 Rev. 2 (101572)
Page 5 of 5
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