Silicon Controlled Rectifier, 355000mA I(T), 800V V(DRM),
| Parameter Name | Attribute value |
| package instruction | , |
| Reach Compliance Code | compli |
| Nominal circuit commutation break time | 10 µs |
| Critical rise rate of minimum off-state voltage | 100 V/us |
| Maximum DC gate trigger current | 200 mA |
| Maximum DC gate trigger voltage | 3 V |
| Maximum holding current | 600 mA |
| Maximum leakage current | 30 mA |
| On-state non-repetitive peak current | 4700 A |
| Maximum on-state voltage | 1.8 V |
| Maximum on-state current | 355000 A |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -40 °C |
| Off-state repetitive peak voltage | 800 V |
| surface mount | NO |
| Trigger device type | SCR |
| Base Number Matches | 1 |
| Part Number | Manufacturer | Description |
|---|---|---|
| P214PH08EN0 | Littelfuse | Silicon Controlled Rectifier, 355000mA I(T), 800V V(DRM), |
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