P105CH08EN0 datasheet, PDF - EEWORLD Datasheet

P105CH08EN0: DescriptionSilicon Controlled Rectifier, 395000mA I(T), 800V V(DRM),; CategoryAnalog mixed-signal IC Trigger device; File Size699KB，6 Pages; ManufacturerIXYS; Related ProductsFound1parts with similar functions to P105CH08EN0

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P105CH08EN0 Overview

Silicon Controlled Rectifier, 395000mA I(T), 800V V(DRM),

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	compli
Nominal circuit commutation break time	10 µs
Critical rise rate of minimum off-state voltage	100 V/us
Maximum DC gate trigger current	200 mA
Maximum DC gate trigger voltage	3 V
Maximum holding current	600 mA
Maximum leakage current	20 mA
On-state non-repetitive peak current	2200 A
Maximum on-state voltage	1.92 V
Maximum on-state current	395000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Off-state repetitive peak voltage	800 V
surface mount	NO
Trigger device type	SCR
Base Number Matches	1

	P105CH08EN0	P105CH06EN0	P105CH04EN0
Description	Silicon Controlled Rectifier, 395000mA I(T), 800V V(DRM),	Silicon Controlled Rectifier, 395000mA I(T), 600V V(DRM),	Silicon Controlled Rectifier, 395000mA I(T), 400V V(DRM),
Reach Compliance Code	compli	compli	compliant
Nominal circuit commutation break time	10 µs	10 µs	10 µs
Critical rise rate of minimum off-state voltage	100 V/us	100 V/us	100 V/us
Maximum DC gate trigger current	200 mA	200 mA	200 mA
Maximum DC gate trigger voltage	3 V	3 V	3 V
Maximum holding current	600 mA	600 mA	600 mA
Maximum leakage current	20 mA	20 mA	20 mA
On-state non-repetitive peak current	2200 A	2200 A	2200 A
Maximum on-state voltage	1.92 V	1.92 V	1.92 V
Maximum on-state current	395000 A	395000 A	395000 A
Maximum operating temperature	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C
Off-state repetitive peak voltage	800 V	600 V	400 V
surface mount	NO	NO	NO
Trigger device type	SCR	SCR	SCR
Base Number Matches	1	1	1

Part Number	Manufacturer	Description
P105CH08EN0	Littelfuse	Silicon Controlled Rectifier, 395000mA I(T), 800V V(DRM),

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