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DF6A6.8FUT1_05

Description
75 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size94KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

DF6A6.8FUT1_05 Overview

75 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE

DF6A6.8FUT1_05 Parametric

Parameter NameAttribute value
Number of terminals6
Number of components4
Maximum breakdown voltage7.2 V
Minimum breakdown voltage6.4 V
Processing package descriptionLEAD FREE, PLASTIC, CASE 419B-02, SC-88, 6 PIN
Lead-freeYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipAVALANCHE
structure2 BANKS, COMMON ANODE, 2 ELEMENTS
Diode component materialssilicon
Maximum power consumption limit0.3850 W
polarityunidirectional
Diode typeTRANS voltage SUPPRESSOR diode
Maximum non-repetitive peak speed power75 W
DF6A6.8FUT
Quad Array for
ESD Protection
This quad voltage suppressor is designed for applications requiring
transient overvoltage protection capability. It is intended for use in
voltage and ESD sensitive equipment such as computers, printers,
business machines, communication systems, medical equipment, and
other applications. Its quad junction common anode design protects
four separate lines using only one package. These devices are ideal for
situations where board space is at a premium.
Specification Features
http://onsemi.com
1
2
3
6
5
4
SC−88 Package Allows Four Separate Unidirectional Configurations
Low Leakage < 1
mA
@ 5 Volt
Breakdown Voltage: 6.4
7.2 Volt @ 5 mA
Low Capacitance (40 pF typical)
ESD Protection Meeting 61000−4−2 Level 4
and 16 kV Human Body Model
These are Pb−Free Devices
Mechanical Characteristics
MARKING
DIAGRAM
1
SC−88
CASE 419B−02
1
68 = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location.)
6
68 MG
G
Void Free, Transfer−Molded, Thermosetting Plastic Case
Corrosion Resistant Finish, Easily Solderable
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Peak Power Dissipation @ 8 x 20
ms
(Note 1)
Steady State Power Dissipation
(Note 2)
Thermal Resistance
Junction−to−Ambient
Derate Above 25°C
Maximum Junction Temperature
Operating Junction and Storage
Temperature Range
ESD Discharge
MIL STD 883C
Method 3015−6
IEC61000−4−2, Air Discharge
IEC61000−4−2, Contact Discharge
Lead Solder Temperature
(10 seconds duration)
Symbol
P
pk
P
D
R
qJA
Value
75
385
Unit
Watts
mW
ORDERING INFORMATION
Device
DF6A6.8FUT1G
Package
SC−88
(Pb−Free)
SC−88
(Pb−Free)
Shipping
3000/Tape & Reel
3000/Tape & Reel
328
3.0
150
−55
to
+150
16
16
8
260
°C/W
mW/°C
°C
°C
kV
DF6A6.8FUT2G
T
Jmax
T
J
, T
stg
V
PP
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
T
L
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Per Waveform Figure 1
2. Mounted on FR−5 Board = 1.0 X 0.75 X 0.062 in.
©
Semiconductor Components Industries, LLC, 2012
October, 2012
Rev. 2
1
Publication Order Number:
DF6A6.8FUT1/D

DF6A6.8FUT1_05 Related Products

DF6A6.8FUT1_05 DF6A6.8FUT1
Description 75 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 75 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
Number of terminals 6 6
Number of components 4 4
Maximum breakdown voltage 7.2 V 7.2 V
Minimum breakdown voltage 6.4 V 6.4 V
surface mount Yes YES
Terminal form GULL WING GULL WING
Terminal location pair DUAL
Diode component materials silicon SILICON
polarity unidirectional UNIDIRECTIONAL
Diode type TRANS voltage SUPPRESSOR diode TRANS VOLTAGE SUPPRESSOR DIODE
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