SP8K2
Transistors
Switching (30V, 6.0A)
SP8K2
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
Application
Power switching, DC / DC converter.
External dimensions
(Unit : mm)
SOP8
5.0±0.2
(5)
(8)
6.0±0.3
3.9±0.15
Max.1.75
Structure
Silicon N-channel
MOS FET
1.5±0.1
0.15
1.27
0.4±0.1
0.1
Each lead has same dimensions
Absolute maximum ratings
(Ta=25°C)
It is the same ratings for the Tr. 1 and Tr. 2.
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
∗1
Pw 10µs, Duty cycle 1%
∗2
MOUNTED ON A CERAMIC BOARD.
Equivalent circuit
(8)
(7)
(6)
(5)
(8) (7) (6) (5)
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
Limits
30
20
±6.0
±24
1.6
6.4
2
150
−55
to
+150
Unit
V
V
A
A
A
A
W
°C
°C
∗1
∗1
∗2
∗2
∗2
0.5±0.1
(1)
(4)
0.2±0.1
(1) (2) (3) (4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗1
∗1
(1)
(2)
(3)
(4)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
∗A
protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Thermal resistance
(Ta=25°C)
Parameter
Channel to ambient
∗MOUNTED
ON A CERAMIC BOARD.
Symbol
Rth (ch-a)
Limits
62.5
Unit
°C
/ W
∗
1/3
SP8K2
Transistors
Electrical characteristics
(Ta=25°C)
It is the same characteristics for the Tr. 1 and Tr. 2.
Parameter
Symbol
I
GSS
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
I
DSS
Gate threshold voltage
V
GS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
charge
Gate-drain
charge
∗Pulsed
R
DS (on)
∗
Y
fs
∗
C
iss
C
oss
C
rss
t
d (on)
∗
t
r
∗
t
d (off)
∗
t
f
∗
Q
g
∗
Q
gs
∗
Q
gd
∗
Min.
−
30
−
1.0
−
−
−
4.0
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
21
30
33
−
520
150
95
9
21
36
13
7.2
1.8
2.8
Max.
10
−
1
2.5
30
42
47
−
−
−
−
−
−
−
−
10.1
−
−
Unit
µA
V
µA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
V
GS
=20V,
V
DS
=0V
I
D
=1mA,
V
GS
=0V
V
DS
=30V,
V
GS
=0V
V
DS
=10V,
I
D
=1mA
I
D
=6.0A,
V
GS
=10V
I
D
=6.0A,
V
GS
=4.5V
I
D
=6.0A,
V
GS
=4V
I
D
=6.0A,
V
DS
=10V
V
DS
=10V
V
GS
=0V
f=1MHz
I
D
=3A,
V
DD
15V
V
GS
=10V
R
L
=5Ω
R
GS
=10Ω
V
DD
15V
V
GS
=5V
I
D
=6.0A
Body diode characteristics (Source-Drain Characteristics)
(Ta=25°C)
It is the same characteristics for the Tr. 1 and Tr. 2.
Parameter
Forward voltage
∗Pulsed
Symbol
V
SD
∗
Min.
−
Typ.
−
Max.
1.2
Unit
V
Conditions
I
S
=6.4A,
V
GS
=0V
2/3
SP8K2
Transistors
Electrical characteristic curves
10000
1000
Ta=25°C
f=1MHz
V
GS
=0V
t
f
1000
C
iss
100
t
d (off)
GATE-SOURCE VOLTAGE : V
GS
(V)
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
Ta=25°C
V
DD
=15V
V
GS
=10V
R
G
=10Ω
Pulsed
10
Ta=25°C
9 V
DD
=15V
I
D
=6A
8
R
G
=10Ω
7 Pulsed
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
t
r
10
100
C
oss
C
rss
t
d (on)
10
0.01
0.1
1
10
100
1
0.01
0.1
1
10
DRAIN-SOURCE VOLTAGE : V
DS
(V)
DRAIN CURRENT : I
D
(A)
TOTAL GATE CHARGE : Qg (nC)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
V
DS
=10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
10
200
Ta=25°C
Pulsed
150
I
D
=6A
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
V
GS
=0V
Pulsed
1
SOURCE CURRENT : I
s
(A)
DRAIN CURRENT : I
D
(A)
1
0.1
100
I
D
=3A
0.1
0.01
50
0.001
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0
2
4
6
8
10
12
14
16
0.01
0.0
0.5
1.0
1.5
GATE-SOURCE VOLTAGE : V
GS
(V)
GATE-SOURCE VOLTAGE : V
GS
(V)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Fig.6 Source Current vs.
Source-Drain Voltage
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
V
GS
=10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
100
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
V
GS
=4.5V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
1000
1000
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
V
GS
=4V
Pulsed
100
10
10
10
1
0.1
1
10
1
0.1
1
10
1
0.1
1
10
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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