FJN598J
FJN598J
Capacitor Microphone Applications
• Especially Suited for use in Audio, Telephone Capacitor Microphones
• Excellent Voltage Characteristic
• Excellent Transient Characteristic
1
TO-92
1. Source 2. Gate 3. Drain
Si N-channel Junction FET
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
GDO
I
G
I
D
P
D
T
J
T
STG
Gate-Drain Voltage
Gate Current
Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-20
10
1
150
150
-55 ~ 150
Units
V
mA
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
GDO
V
GS
(off)
I
DSS
lY
FS
l
C
ISS
C
RSS
Parameter
Gate-Drain Breakdown Voltage
Gate-Source Cut-off Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Test Condition
I
G
= -100uA
V
DS
=5V, I
D
=1µA
V
DS
=5V, V
GS
=0
V
DS
=5V, V
GS
=0, f=1MHz
V
DS
=5V, V
GS
=0, f=1MHz
V
DS
=5V, V
GS
=0, f=1MHz
100
0.4
1.2
3.5
0.65
Min.
-20
Typ.
-0.6
Max.
-1.5
350
Units
V
V
µA
ms
pF
pF
I
DSS
Classification
Classification
I
DSS
(µA)
A
100 ~ 170
B
150 ~ 240
C
210 ~ 350
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
FJN598J
Typical Characteristics
500
450
400
I
DSS
= 200
µ
A
1000
900
800
700
600
500
400
300
200
I
DSS
= 500
µ
A
I
D
[
µ
A], DRAIN CURRENT
350
300
250
200
150
100
50
0
0
1
2
3
4
5
6
7
8
9
10
I
D
[
µ
A], DRAIN CURRENT
V
GS
= 0
V
GS
= -0.1V
V
GS
= -0.2V
V
GS
= -0.3V
V
GS
= -0.4V
V
GS
= -0.5V
0
1
2
3
4
5
6
7
V
GS
= 0
V
GS
= -0.1V
V
GS
= -0.2V
V
GS
= -0.3V
V
GS
= -0.4V
100
0
V
GS
= -0.6V
8
9
10
V
DS
[V], DRAIN-SOURCE VOLTAGE
V
DS
[V], DRAIN-SOURCE VOLTAGE
Figure 1. I
D
-V
DS
Figure 2. I
D
-V
DS
lFSl [ms], FORWARD TRANSFER ADMITTANCE
1.6
10
V
DS
= 5V
1.4
I
D
[mA], DRAIN CURRENT
V
DS
= 5V
V
GS
= 0
f=1kHz
1.2
1.0
0.8
1
0.6
0.4
0.2
0.0
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0.1
0.1
1
V
GS
[V], GATE-SOURCE VOLTAGE
I
DSS
[mA], DRAIN CURRENT
Figure 3. I
D
-V
GS
Figure 4.
y
FS
-I
DSS
V
GS
(off)[V], GATE-SOURCE CUT-OFF VOLTAGE
-
10
C
ISS
[pF], INPUT CAPACITANCE
V
DS
= 5V
I
D
= 1
µ
A
100
-
1
10
-
0.1
1
0.1
1
1
10
I
DSS
[mA], DRAIN CURRENT
V
DS
[V], DRAIN-SOURCE VOLTAGE
Figure 5. V
GS(
off)-I
DSS
Figure 6. C
ISS
-V
DS
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002
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®
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2
CMOS™
E
HiSeC™
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I
2
C™
Across the board. Around the world.™
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®
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®
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®
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®
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1