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FJN598JATA

Description
JFET Si N-Ch Junction FET
Categorysemiconductor    Discrete semiconductor   
File Size49KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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JFET Si N-Ch Junction FET

FJN598JATA Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerON Semiconductor
Product CategoryJFET
RoHSDetails
Mounting StyleThrough Hole
Package / CaseTO-92-3 Kinked Lead
Transistor PolarityN-Channel
ConfigurationSingle
Vgs - Gate-Source Breakdown Voltage- 20 V
Drain-Source Current at Vgs=0100 uA to 350 uA
Id - Continuous Drain Current1 mA
Pd - Power Dissipation150 mW
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingAmmo Pack
Operating Temperature Range- 55 C to + 150 C
TypeJFET
Gate-Source Cutoff Voltage- 1.5 V
Factory Pack Quantity2000
Unit Weight0.007090 oz
FJN598J
FJN598J
Capacitor Microphone Applications
• Especially Suited for use in Audio, Telephone Capacitor Microphones
• Excellent Voltage Characteristic
• Excellent Transient Characteristic
1
TO-92
1. Source 2. Gate 3. Drain
Si N-channel Junction FET
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
GDO
I
G
I
D
P
D
T
J
T
STG
Gate-Drain Voltage
Gate Current
Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-20
10
1
150
150
-55 ~ 150
Units
V
mA
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
GDO
V
GS
(off)
I
DSS
lY
FS
l
C
ISS
C
RSS
Parameter
Gate-Drain Breakdown Voltage
Gate-Source Cut-off Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Test Condition
I
G
= -100uA
V
DS
=5V, I
D
=1µA
V
DS
=5V, V
GS
=0
V
DS
=5V, V
GS
=0, f=1MHz
V
DS
=5V, V
GS
=0, f=1MHz
V
DS
=5V, V
GS
=0, f=1MHz
100
0.4
1.2
3.5
0.65
Min.
-20
Typ.
-0.6
Max.
-1.5
350
Units
V
V
µA
ms
pF
pF
I
DSS
Classification
Classification
I
DSS
(µA)
A
100 ~ 170
B
150 ~ 240
C
210 ~ 350
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002

FJN598JATA Related Products

FJN598JATA FJN598JCTA FJN598JBBU
Description JFET Si N-Ch Junction FET JFET Si N-Ch Junction FET JFET Si N-Ch Junction FET
Product Attribute Attribute Value Attribute Value Attribute Value
Manufacturer ON Semiconductor ON Semiconductor ON Semiconductor
Product Category JFET JFET JFET
RoHS Details Details Details
Mounting Style Through Hole Through Hole Through Hole
Package / Case TO-92-3 Kinked Lead TO-92-3 Kinked Lead TO-92
Transistor Polarity N-Channel N-Channel N-Channel
Configuration Single Single Single
Vgs - Gate-Source Breakdown Voltage - 20 V - 20 V - 20 V
Drain-Source Current at Vgs=0 100 uA to 350 uA 100 uA to 350 uA 100 uA to 350 uA
Id - Continuous Drain Current 1 mA 1 mA 1 mA
Pd - Power Dissipation 150 mW 150 mW 150 mW
Minimum Operating Temperature - 55 C - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C + 150 C
Packaging Ammo Pack Ammo Pack Bulk
Operating Temperature Range - 55 C to + 150 C - 55 C to + 150 C - 55 C to + 150 C
Type JFET JFET JFET
Gate-Source Cutoff Voltage - 1.5 V - 1.5 V - 1.5 V
Factory Pack Quantity 2000 2000 1000
Unit Weight 0.007090 oz 0.007090 oz 0.007090 oz

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