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KSA916YTA_Q

Description
Bipolar Transistors - BJT PNP Epitaxial Transistor
Categorysemiconductor    Discrete semiconductor   
File Size283KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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KSA916YTA_Q Overview

Bipolar Transistors - BJT PNP Epitaxial Transistor

KSA916YTA_Q Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerON Semiconductor
Product CategoryBipolar Transistors - BJT
RoHSN
Mounting StyleThrough Hole
Package / CaseTO-92L-3
Transistor PolarityPNP
ConfigurationSingle
Collector- Emitter Voltage VCEO Max- 120 V
Collector- Base Voltage VCBO- 120 V
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 1 V
Maximum DC Collector Current0.8 A
Gain Bandwidth Product fT120 MHz
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
DC Current Gain hFE Max240
Height8 mm
Length4.9 mm
PackagingAmmo Pack
Width3.9 mm
Continuous Collector Current- 0.8 A
DC Collector/Base Gain hfe Min60
Pd - Power Dissipation900 mW
Factory Pack Quantity2000
Unit Weight0.006526 oz
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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KSA916YTA_Q Related Products

KSA916YTA_Q KSA916YBU KSA916OBU
Description Bipolar Transistors - BJT PNP Epitaxial Transistor Bipolar Transistors - BJT PNP Epitaxial Sil TRANS PNP 120V 0.8A TO-92L
Product Attribute Attribute Value Attribute Value -
Manufacturer ON Semiconductor ON Semiconductor -
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT -
RoHS N Details -
Mounting Style Through Hole Through Hole -
Package / Case TO-92L-3 TO-92-3 -
Transistor Polarity PNP PNP -
Configuration Single Single -
Collector- Emitter Voltage VCEO Max - 120 V - 120 V -
Collector- Base Voltage VCBO - 120 V - 120 V -
Emitter- Base Voltage VEBO - 5 V - 5 V -
Collector-Emitter Saturation Voltage - 1 V - 1 V -
Maximum DC Collector Current 0.8 A 0.8 A -
Gain Bandwidth Product fT 120 MHz 120 MHz -
Minimum Operating Temperature - 55 C - 55 C -
Maximum Operating Temperature + 150 C + 150 C -
DC Current Gain hFE Max 240 240 -
Height 8 mm 8 mm -
Length 4.9 mm 4.9 mm -
Packaging Ammo Pack Bulk -
Width 3.9 mm 3.9 mm -
Continuous Collector Current - 0.8 A - 0.8 A -
DC Collector/Base Gain hfe Min 60 60 -
Pd - Power Dissipation 900 mW 900 mW -
Factory Pack Quantity 2000 500 -
Unit Weight 0.006526 oz 0.008466 oz -
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