MMBZ52xxELT1G Series,
SZMMBZ52xxELT1G Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Features
http://onsemi.com
3
Cathode
1
Anode
•
•
•
•
•
•
•
•
225 mW Rating on FR−4 or FR−5 Board
Zener Voltage Range
−
2.4 V to 91 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power
−
225 W (8 x 20
ms)
AEC−Q101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
•
Pb−Free Packages are Available
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
MARKING
DIAGRAM
3
1
2
SOT−23
CASE 318
STYLE 8
1
Bxx M
G
G
Bxx
xx
M
G
= Device Code
= (Refer to page 2)
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
260°C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V−0
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 20
ms
(Note 1)
@ T
L
≤
25°C
Total Power Dissipation on FR−5 Board,
(Note 2) @ T
A
= 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
Total Power Dissipation on Alumina
Substrate, (Note 3) @ T
A
= 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
Symbol
P
pk
P
D
Max
225
Unit
W
ORDERING INFORMATION
Device
MMBZ52xxELT1G
SZMMBZ52xxELT1G
225
1.8
556
300
2.4
417
−65
to
+150
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3000 / Tape &
Reel
3000 / Tape &
Reel
10000 / Tape &
Reel
MMBZ52xxELT3G
R
qJA
P
D
R
qJA
T
J
, T
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 9.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
©
Semiconductor Components Industries, LLC, 2011
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
December, 2011
−
Rev. 7
1
Publication Order Number:
MMBZ5221ELT1/D
MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T
A
= 25°C
unless otherwise noted, V
F
= 0.95 V Max. @ I
F
= 10 mA)
Symbol
V
Z
I
ZT
Z
ZT
I
ZK
Z
ZK
I
R
V
R
I
F
V
F
Parameter
Reverse Zener Voltage @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZK
Reverse Leakage Current @ V
R
Reverse Voltage
Forward Current
Forward Voltage @ I
F
V
Z
V
R
I
R
V
F
I
ZT
V
I
F
I
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-NC, 3-Cathode) (V
F
= 0.9 V Max @ I
F
= 10 mA for all types.)
Zener Voltage
(Note 4)
Device
Marking
BE2
BE7
BE9
BF1
BF2
BF3
BF4
BF6
BF7
BF8
BF9
BG2
BG3
BG5
BG6
BG7
BG8
BG9
BH2
BH4
V
Z
(V)
Min
2.28
3.13
3.70
4.08
4.46
4.84
5.32
5.89
6.46
7.12
7.79
8.65
9.50
11.40
12.35
13.30
14.25
15.20
17.10
19.00
Nom
2.4
3.3
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
12
13
14
15
16
18
20
Max
2.52
3.47
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.55
10.50
12.60
13.65
14.70
15.75
16.80
18.90
21.00
@ I
ZT
mA
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9
8.5
7.8
7
6.2
Zener Impedance
Z
ZT
@ I
ZT
W
30
28
23
22
19
17
11
7
5
6
8
10
17
30
13
15
16
17
21
25
Z
ZK
@ I
ZK
W
1200
1600
1900
2000
1900
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
mA
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Leakage Current
I
R
@ V
R
mA
100
25
10
5
5
5
5
5
3
3
3
3
3
1
0.5
0.1
0.1
0.1
0.1
0.1
V
1
1
1
1
2
2
3
4
5
6
6.5
7
8
9.1
9.9
10
11
12
14
15
Device*
MMBZ5221ELT1/T3G
MMBZ5226ELT1/T3G
MMBZ5228ELT1/T3G
MMBZ5229ELT1/T3G
MMBZ5230ELT1/T3G
MMBZ5231ELT1/T3G
MMBZ5232ELT1/T3G
MMBZ5234ELT1/T3G
MMBZ5235ELT1/T3G
MMBZ5236ELT1/T3G
MMBZ5237ELT1/T3G
MMBZ5239ELT1/T3G
MMBZ5240ELT1/T3G
MMBZ5242ELT1/T3G
MMBZ5243ELT1/T3G
MMBZ5244ELT1/T3G
MMBZ5245ELT1/T3G
MMBZ5246ELT1G†
MMBZ5248ELT1/T1G
MMBZ5250ELT1/T3G
4. Zener voltage is measured with a pulse test current I
Z
at an ambient temperature of 25°C.
*Includes SZ−prefix devices where applicable.
†MMBZ5246EL, MMBZ5252EL, and MMBZ5265EL Not Available in 10,000/Tape & Reel.
http://onsemi.com
2
MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series
ELECTRICAL CHARACTERISTICS
(continued) (Pinout: 1-Anode, 2-NC, 3-Cathode) (V
F
= 0.9 V Max @ I
F
= 10 mA for all types.)
Zener Voltage
(Note 5)
Device
Marking
BH6
BH7
BH8
BH9
BJ1
BJ2
BJ3
BJ6
BJ7
BJ8
BK1
V
Z
(V)
Min
22.80
23.75
25.65
26.60
28.50
31.35
34.20
49.35
48.45
53.20
58.90
Nom
24
25
27
28
30
33
36
47
51
56
62
Max
25.20
26.25
28.35
29.40
31.50
34.65
37.80
44.65
53.55
58.80
65.10
@ I
ZT
mA
5.2
5
4.6
4.5
4.2
3.8
3.4
2.7
2.5
2.2
2
Zener Impedance
Z
ZT
@ I
ZT
W
33
35
41
44
49
58
70
105
125
150
185
Z
ZK
@ I
ZK
W
600
600
600
600
600
700
700
1000
1100
1300
1400
mA
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Leakage Current
I
R
@ V
R
mA
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
18
19
21
21
23
25
27
36
37
43
47
Device*
MMBZ5252ELT1G†
MMBZ5253ELT1/T3G
MMBZ5254ELT1/T3G
MMBZ5255ELT1/T3G
MMBZ5256ELT1/T3G
MMBZ5257ELT1/T3G
MMBZ5258ELT1/T3G
MMBZ5261ELT1G
MMBZ5262ELT1/T3G
MMBZ5263ELT1/T3G
MMBZ5265ELT1G†
5. Zener voltage is measured with a pulse test current I
Z
at an ambient temperature of 25°C.
*Includes SZ−prefix devices where applicable.
†MMBZ5246EL, MMBZ5252EL, and MMBZ5265EL Not Available in 10,000/Tape & Reel.
http://onsemi.com
3
MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series
TYPICAL CHARACTERISTICS
8
7
6
5
4
3
2
1
0
−1
TYPICAL T
C
VALUES
FOR MMBZ52xxBLT1G SERIES,
SZMMBZ52xxBLT1G SERIES
V
Z
@ I
ZT
100
θ
VZ, TEMPERATURE COEFFICIENT (mV/
°
C)
TYPICAL T
C
VALUES
FOR MMBZ52xxBLT1G SERIES,
SZMMBZ52xxBLT1G SERIES
V
Z
@ I
ZT
θ
VZ, TEMPERATURE COEFFICIENT (mV/
°
C)
10
−2
−3
2
3
4
5
6
7
8
9
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
11
12
1
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
100
Figure 1. Temperature Coefficients
(Temperature Range
−
55°C to +150°C)
Figure 2. Temperature Coefficients
(Temperature Range
−
55°C to +150°C)
1000
Z ZT, DYNAMIC IMPEDANCE (
Ω
)
T
J
= 25°C
I
Z(AC)
= 0.1 I
Z(DC)
f = 1 kHz
1000
IF, FORWARD CURRENT (mA)
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
I
Z
= 1 mA
100
5 mA
20 mA
10
100
10
150°C
1
1
10
V
Z
, NOMINAL ZENER VOLTAGE
100
1
0.4
0.5
75°C 25°C
0°C
1.1
1.2
0.6
0.7
0.8
0.9
1.0
V
F
, FORWARD VOLTAGE (V)
Figure 3. Effect of Zener Voltage on
Zener Impedance
Figure 4. Typical Forward Voltage
http://onsemi.com
4
MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series
TYPICAL CHARACTERISTICS
1000
0 V BIAS
1 V BIAS
C, CAPACITANCE (pF)
100
BIAS AT
50% OF V
Z
NOM
10
T
A
= 25°C
1000
I R , LEAKAGE CURRENT (
m
A)
100
10
1
0.1
+150°C
0.01
+ 25°C
- 55°C
10
20
30
40
50
60
70
V
Z
, NOMINAL ZENER VOLTAGE (V)
80
90
0.00
1
0.0001
1
1
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
0.00001
0
100
Figure 5. Typical Capacitance
100
T
A
= 25°C
I Z , ZENER CURRENT (mA)
I Z , ZENER CURRENT (mA)
10
10
100
Figure 6. Typical Leakage Current
T
A
= 25°C
1
1
0.1
0.1
0.01
0
2
4
6
8
V
Z
, ZENER VOLTAGE (V)
10
12
0.01
10
30
50
70
V
Z
, ZENER VOLTAGE (V)
90
Figure 7. Zener Voltage versus Zener Current
(V
Z
Up to 12 V)
100
% OF PEAK PULSE CURRENT
90
80
70
60
50
40
30
20
10
0
0
20
40
t, TIME (ms)
t
P
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
t
r
PEAK VALUE I
RSM
@ 8
ms
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8
ms
HALF VALUE I
RSM
/2 @ 20
ms
60
80
Figure 9. 8
×
20
ms
Pulse Waveform
http://onsemi.com
5
京公网安备 11010802033920号
EEWORLD
