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FFPF06F150STU

Description
Diodes - General Purpose, Power, Switching 6A/1500V Damper
Categorysemiconductor    Discrete semiconductor   
File Size51KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FFPF06F150STU Overview

Diodes - General Purpose, Power, Switching 6A/1500V Damper

FFPF06F150STU Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerON Semiconductor
Product CategoryDiodes - General Purpose, Power, Switching
RoHSDetails
Mounting StyleThrough Hole
Package / CaseTO-220F
Peak Reverse Voltage1500 V
Max Surge Current60 A
If - Forward Current6 A
ConfigurationSingle
Recovery Time170 ns
Vf - Forward Voltage1.6 V
Ir - Reverse Current7 uA
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
PackagingTube
Height9.19 mm
Length10.16 mm
Termination StyleThrough Hole
TypeSwitching Diode
Width4.7 mm
Factory Pack Quantity50
Vr - Reverse Voltage1500 V
Unit Weight0.127339 oz
FFPF06F150S
FFPF06F150S
Features
• High voltage and high reliability
• High speed switching
• Low forward voltage
Applications
• Suitable for damper diode in horizontal
deflection circuits
1
2
TO-220F
1. Cathode
2. Anode
DAMPER DIODE
Absolute Maximum Ratings
Symbol
V
RRM
I
F(AV)
I
FSM
T
J,
T
STG
T
C
=25°C unless otherwise noted
°
Value
1500
@ T
C
= 125°C
6
60
- 65 to +150
Units
V
A
A
°C
Parameter
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
Thermal Characteristics
Symbol
R
θJC
Parameter
Maximum Thermal Resistance, Junction to Case
T
C
=25
°
C unless otherwise noted
Min.
T
C
= 25
°C
T
C
= 125
°C
T
C
= 25
°C
T
C
= 125
°C
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
Max.
1.6
1.4
µA
7
60
170
350
17
ns
ns
V
Units
V
Value
4.0
Units
°C/W
Electrical Characteristics
Symbol
V
FM
*
Parameter
Maximum Instantaneous Forward Voltage
I
F
= 6A
I
F
= 6A
Maximum Instantaneous Reverse Current
@ rated V
R
Maximum Reverse Recovery Time
(I
F
=1A, di/dt = 50A/µs)
Maximum Forward Recovery Time
(I
F
=6.5A, di/dt = 50A/µs)
Maximum Forward Recovery Voltage
I
RM
*
t
rr
t
fr
V
FRM
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
©2000 Fairchild Semiconductor International
Rev. F, September 2000
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