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FDP15N65

Description
MOSFET SINGLE N-CH 500V .38OHM SMPS PWR
Categorysemiconductor    Discrete semiconductor   
File Size396KB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FDP15N65 Overview

MOSFET SINGLE N-CH 500V .38OHM SMPS PWR

FDP15N65 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerON Semiconductor
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current15 A
Rds On - Drain-Source Resistance440 mOhms
Vgs - Gate-Source Voltage30 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Pd - Power Dissipation250 W
Channel ModeEnhancement
PackagingTube
Height16.3 mm
Length10.67 mm
Transistor Type1 N-Channel
TypeMOSFET
Width4.7 mm
Forward Transconductance - Min19.2 S
Fall Time65 ns
Rise Time125 ns
Factory Pack Quantity50
Typical Turn-Off Delay Time105 ns
Typical Turn-On Delay Time65 ns
Unit Weight0.090478 oz
FDP15N65 / FDPF15N65 650V N-Channel MOSFET
UniFET
FDP15N65 / FDPF15N65
650V N-Channel MOSFET
Features
• 15A, 650V, R
DS(on)
= 0.44Ω @V
GS
= 10 V
• Low gate charge ( typical 48.5 nC)
• Low C
rss
( typical 23.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
April 2007
TM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
G DS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
FDP15N65
15
9.5
60
FDPF15N65
650
15*
9.5*
60*
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
±
30
637
15
25.0
4.5
250
2.0
-55 to +150
300
38.5
0.3
W
W/°C
°C
°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction termperature.
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FDP15N65
0.5
0.5
62.5
FDPF15N65
3.3
--
62.5
Unit
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
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