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BLC8G27LS-180AVY

Description
RF MOSFET Transistors Power LDMOS trans
Categorysemiconductor    Discrete semiconductor   
File Size1MB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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RF MOSFET Transistors Power LDMOS trans

BLC8G27LS-180AVY Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryRF MOSFET Transistors
RoHSDetails
TechnologySi
PackagingReel
Factory Pack Quantity100
BLC8G27LS-180AV
Power LDMOS transistor
Rev. 5 — 24 May 2017
Product data sheet
1. Product profile
1.1 General description
180 W LDMOS packaged asymmetrical Doherty power transistor for base station
applications at frequencies from 2496 MHz to 2690 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a Doherty production test circuit.
Test signal
1-carrier W-CDMA
[1]
f
(MHz)
2496 to 2690
V
DS
(V)
28
P
L(AV)
(W)
28
G
p
(dB)
14
D
(%)
43.5
ACPR
(dBc)
30
[1]
Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for broadband operation
Low thermal resistance providing excellent thermal stability
Integrated ESD protection
Designed for low memory effects providing excellent pre-distortability
Lower output capacitance for improved performance in Doherty applications
Asymmetrical design to achieve optimal efficiency across the band
Decoupling leads to enable improved video bandwidth
Internally matched for ease of use (input and output)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifier for W-CDMA base stations and multi carrier applications in the
2496 MHz to 2690 MHz frequency range
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