DISCRETE SEMICONDUCTORS
DATA SHEET
BFR93A
NPN 6 GHz wideband transistor
Product specification
Supersedes data of September 1995
1997 Oct 29
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistor
FEATURES
High power gain
Low noise figure
Very low intermodulation distortion.
APPLICATIONS
RF wideband amplifiers and
oscillators.
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT93.
PINNING
PIN
1
2
3
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
C
re
f
T
G
UM
F
V
O
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
T
s
95
C
I
C
= 0; V
CE
= 5 V; f = 1 MHz
I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz
open emitter
open base
CONDITIONS
TYP.
0.6
6
base
emitter
collector
DESCRIPTION
lfpage
BFR93A
3
1
Top view
Marking code:
R2p.
2
MSB003
Fig.1 SOT23.
MAX.
15
12
35
300
UNIT
V
V
mA
mW
pF
GHz
dB
dB
dB
mV
maximum unilateral power gain I
C
= 30 mA; V
CE
= 8 V; f = 1 GHz; T
amb
= 25
C
13
I
C
= 30 mA; V
CE
= 8 V; f = 2 GHz; T
amb
= 25
C
7
noise figure
output voltage
I
C
= 5 mA; V
CE
= 8 V; f = 1 GHz;
s
=
opt
;
T
amb
= 25
C
d
im
=
60
dB; I
C
= 30 mA; V
CE
= 8 V;
R
L
= 75
;
T
amb
= 25
C;
f
p
+ f
q
f
r
= 793.25 MHz
1.9
425
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
T
s
95
C;
note 1
open emitter
open base
open collector
CONDITIONS
MIN.
65
MAX.
15
12
2
35
300
+150
+175
UNIT
V
V
V
mA
mW
C
C
1997 Oct 29
2
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
PARAMETER
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
CONDITIONS
I
E
= 0; V
CB
= 5 V
I
C
= 30 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= i
c
= 0; V
CE
= 5 V; f = 1 MHz;
T
amb
= 25
C
I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz
I
C
= 30 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
C
I
C
= 30 mA; V
CE
= 8 V; f = 2 GHz;
T
amb
= 25
C
F
noise figure (note 2)
I
C
= 5 mA; V
CE
= 8 V; f = 1 GHz;
s
=
opt
; T
amb
= 25
C
I
C
= 5 mA; V
CE
= 8 V; f = 2 GHz;
s
=
opt
; T
amb
= 25
C
V
O
d
2
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and G
UM
2. Measured on the same die in a SOT37 package (BFR91A).
3. d
im
=
60
dB (DIN 45004B); I
C
= 30 mA; V
CE
= 8 V; R
L
= 75
;
T
amb
= 25
C;
V
p
= V
O
at d
im
=
60
dB; f
p
= 795.25 MHz;
V
q
= V
O
6
dB at f
q
= 803.25 MHz;
V
r
= V
O
6
dB at f
r
= 805.25 MHz;
measured at f
p
+ f
q
f
r
= 793.25 MHz.
4. I
C
= 30 mA; V
CE
= 8 V; R
L
= 75
;
T
amb
= 25
C;
V
p
= 200 mV at f
p
= 250 MHz;
V
q
= 200 mV at f
q
= 560 MHz;
measured at f
p
+ f
q
= 810 MHz.
output voltage
second order intermodulation
distortion
notes 2 and 3
notes 2 and 4
MIN.
40
4.5
TYP.
90
0.7
1.9
0.6
6
13
7
1.9
3
425
50
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
T
s
95
C;
note 1
VALUE
260
BFR93A
UNIT
K/W
MAX. UNIT
50
pF
pF
pF
GHz
dB
dB
dB
dB
mV
dB
nA
S
21
-
=
10 log --------------------------------------------------------- dB .
2
2
1
–
S
11
1
–
S
22
2
1997 Oct 29
3
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFR93A
handbook, full pagewidth
1.5 nF
1.5 nF
VBB
10 kΩ
L2
L3
1 nF
1 nF
L1
1 nF
270
Ω
DUT
75
Ω
output
VCC
75
Ω
input
3.3 pF
18
Ω
0.68 pF
MBB251
L1 = L3 = 5
H
choke.
L2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm.
Fig.2 Intermodulation distortion and second harmonic distortion MATV test circuit.
MBG246
400
handbook, halfpage
Ptot
(mW)
300
handbook, halfpage
120
MCD087
h FE
80
200
40
100
0
0
50
100
150
T (
o
C)
s
200
0
0
10
20
IC (mA)
30
V
CE
= 5 V; T
j
= 25
C.
Fig.4
Fig.3 Power derating curve.
DC current gain as a function of
collector current.
1997 Oct 29
4
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFR93A
MBB252
handbook, halfpage
1
Cc
(pF)
handbook, halfpage
8
MCD089
fT
0.8
(GHz)
6
0.6
4
0.4
2
0.2
0
0
4
8
12
V CB
16
(V)
0
0
10
20
30
I C (mA)
40
I
E
= i
e
= 0; f = 1 MHz; T
j
= 25
C.
V
CE
= 5 V; f = 500 MHz; T
j
= 25
C.
Fig.5
Collector capacitance as a function of
collector-base voltage; typical values.
Fig.6
Transition frequency as a function of
collector current; typical values.
handbook, halfpage
30
MBB255
handbook, halfpage
30
MBB256
gain
(dB)
MSG
20
GUM
gain
(dB)
20
MSG
G UM
10
10
0
0
10
20
30
IC (mA)
40
0
0
10
20
30
I C (mA)
40
V
CE
= 8 V; f = 500 MHz.
V
CE
= 8 V; f = 1 GHz.
Fig.7
Gain as a function of collector current;
typical values.
Fig.8
Gain as a function of collector current;
typical values.
1997 Oct 29
5
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