performance switching of analog signals. Combining low
power, high speed (t
ON
: 25 ns, t
OFF
: 14 ns), low
on-resistance (R
DS(on)
: 0.44
)
and small physical size
(SC70), the DG2711 is ideal for portable and battery
powered applications requiring high performance and
efficient use of board space.
The DG2711 is built on Vishay Siliconix’s low voltage
submicron CMOS process. An epitaxial layer prevents
latchup. Break-before-make is guaranteed for DG2711.
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
As a committed partner to the community and the
environment, Vishay Siliconix manufactures this product
with the lead (Pb)-free device terminations. For analog
switching products manufactured with 100 % matte tin
device terminations, the lead (Pb)-free "-E3" suffix is being
used as a designator.
FEATURES
•
•
•
•
•
•
Low voltage operation (1.6 V to 3.6 V)
Low on-resistance - R
DS(on)
: 0.44
typ.
Fast switching - t
ON
: 25 ns, t
OFF
: 14 ns
Low leakage
TTL/CMOS compatible
6-pin SC-70 package
•
Compliant to RoHS directive 2002/95/EC
BENEFITS
•
•
•
•
Reduced power consumption
Simple logic interface
High accuracy
Reduce board space
APPLICATIONS
•
•
•
•
•
Cellular phones
Communication systems
Portable test equipment
Battery operated systems
Sample and hold circuits
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
SC-70
IN
V+
GND
1
2
3
Top View
6
5
4
NO (Source
1
)
COM
NC (Source
2
)
TRUTH TABLE
Logic
0
1
NC
ON
OFF
NO
OFF
ON
Device Marking:
E9xx
ORDERING INFORMATION
Temp. Range
- 40 to 85 °C
Package
SC70-6
Part Number
DG2711DL-T1-E3
Document Number: 73200
S10-2403-Rev. C, 25-Oct-10
www.vishay.com
1
DG2711
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Reference V+ to GND
IN, COM, NC, NO
a
Limit
- 0.3 to + 4
- 0.3 to (V+ + 0.3)
± 200
± 300
- 65 to 150
250
(D Suffix)
6-Pin SO70
c
Unit
V
mA
°C
mW
Continuous Current (NO, NC and COM Pins)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature
Power Dissipation (Packages)
b
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 3.1 mW/°C above 70 °C.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS
(V+ = 1.8 V)
Test Conditions
Otherwise Unless Specified
Parameter
Analog Switch
Analog Signal Range
d
On-Resistance
V
NO
, V
NC
,
V
COM
R
ON
I
NO(off)
I
NC(off)
I
COM(off)
Channel-On Leakage Current
f
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
d
Input Current
f
Dynamic Characteristics
Turn-On Time
d
Turn-Off
Time
d
t
ON
t
OFF
t
d
Q
INJ
OIRR
X
TALK
C
NO(off)
C
NC(off)
C
ON
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
figure
3
R
L
= 50, C
L
= 5 pF, f = 1 MHz
V
NO
or V
NC
= 1.5 V, R
L
= 300
,
C
L
= 35 pF
Figures1 and 2
Room
Full
d
Room
Full
Room
Room
Room
Room
Room
Room
3
20
- 56
- 56
73
167
pC
dB
22
36
60
62
42
44
ns
V
INH
V
INL
C
in
I
INL
or I
INH
V
IN
= 0 or V+
Full
Full
Full
Full
-1
5
1
1.0
0.4
V
pF
µA
I
COM(on)
V+ = 1.8 V, V
COM
= 0.9 V
I
NO
, I
NC
= 100 mA
V+ = 2.2 V,
V
NO
, V
NC
= 0.2 V/2 V, V
COM
= 2 V/0.2 V
Full
Room
Full
Room
Full
Full
V+ = 2.2 V, V
NO
, V
NC
= V
COM
= 0.2 V/2 V
d
Limits
- 40 °C to 85 °C
Temp.
a
Min.
b
Typ.
c
Max.
b
Unit
Symbol
V+ = 1.8 V, ± 10 %, V
IN
= 0.4 V or 1.0 V
e
0
0.8
-1
- 10
-1
- 10
-1
- 10
V+
2.0
2.5
1
10
1
10
1
10
V
Switch Off Leakage Current
f
Room
d
nA
Room
Full
d
Break-Before-Make Time
d
Charge Injection
d
Off-Isolation
d
Crosstalk
d
NO, NC Off Capacitance
d
Channel-On Capacitance
d
V
IN
= 0 or V+, f = 1 MHz
pF
www.vishay.com
2
Document Number: 73200
S10-2403-Rev. C, 25-Oct-10
DG2711
Vishay Siliconix
SPECIFICATIONS
(V+ = 3.0 V)
Test Conditions
Otherwise Unless Specified
Parameter
Analog Switch
Analog Signal Range
d
On-Resistance
R
ON
Flatness
R
ON
Match
V
NO
, V
NC
,
V
COM
R
ON
R
ON
Flatness
R
ON
I
NO(off)
I
NC(off)
I
COM(off)
Channel-On Leakage Current
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
d
Input Current
f
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection
d
Off-Isolation
d
Crosstalk
d
NO, NC Off Capacitance
d
Channel-On Capacitance
d
Power Supply
Power Supply Range
Power Supply Current
V+
I+
V+ = 3.6 V, V
IN
= 0 or V+
1.6
0.01
3.6
1.0
V
µA
t
ON
t
OFF
t
d
Q
INJ
OIRR
X
TALK
C
NO(off)
C
NC(off)
C
ON
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
,
figure 3
R
L
= 50, C
L
= 5 pF, f = 1 MHz
V
NO
or V
NC
= 1.5 V, R
L
= 300
,
C
L
= 35 pF
figures 1 and 2
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
1
28
- 56
- 56
70
163
pC
dB
25
14
46
48
38
40
ns
V
INH
V
INL
C
in
I
INL
or I
INH
V
IN
= 0 or V+
Full
Full
Full
Full
-1
5
1
1.4
0.5
V
pF
µA
I
COM(on)
V+ = 2.7 V, V
COM
= 1.5 V
I
NO
, I
NC
= 100 mA
V+ = 2.7 V, V
COM
= 0.6 V, 1.5 V
I
NO
, I
NC
= 100 mA
V+ = 2.7 V, V
COM
= 1.5 V
I
NO
, I
NC
= 100 mA
V+ = 3.3 V,
V
NO
, V
NC
= 0.3 V/3 V, V
COM
= 3 V/0.3 V
Full
Room
Full
Room
Room
Room
Full
Room
Full
Room
Full
-1
- 10
-1
- 10
-1
- 10
0
0.44
V+
0.6
0.7
0.2
0.07
1
10
1
10
1
10
nA
V
Symbol
V+ = 3 V, ± 10 %,V
IN
= 0.5 V or 1.4 V
e
Temp.
a
Limits
- 40 °C to 85 °C
Min.
b
Typ.
c
Max.
b
Unit
0.14
Switch Off Leakage Current
V+ = 3.3 V, V
NO
, V
NC
= V
COM
= 0.3 V/3 V
V
IN
= 0 or V+, f = 1 MHz
pF
Notes:
a. Room = 25 °C, full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
f. Guaranteed by 3 V leakage testing, not production tested.
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