Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
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Kind regards,
Team Nexperia
NXP Semiconductors
Product data sheet
PNP general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 65 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complements: BC846W, BC847W and BC848W.
MARKING
TYPE NUMBER
BC856W
BC856AW
BC856BW
BC857W
BC857AW
BC857BW
BC857CW
BC858W
Note
1. * = -: made in Hong Kong.
* = t: made in Malaysia.
MARKING CODE
(1)
3D*
3A*
3B*
3H*
3E*
3F*
3G*
3M*
Fig.1
1
Top view
handbook, halfpage
BC856W; BC857W;
BC858W
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
2
MAM048
Simplified outline (SOT323; SC70) and
symbol.
2002 Feb 04
2
NXP Semiconductors
Product data sheet
PNP general purpose transistors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
V
CBO
BC856W
BC857W
BC858W
V
CEO
collector-emitter voltage
BC856W
BC857W
BC858W
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Refer to SOT323 standard mounting conditions.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT323 standard mounting conditions.
PARAMETER
thermal resistance from junction to
ambient
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open collector
open base
PARAMETER
collector-base voltage
BC856W; BC857W; BC858W
CONDITIONS
open emitter
−
−
−
−
−
−
−
−
−
−
T
amb
≤
25
°C;
note 1
−
MIN.
MAX.
−80
−50
−30
−65
−45
−30
−5
−100
−200
−200
200
+150
150
+150
V
V
V
V
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
−65
−
−65
CONDITIONS
in free air; note 1
VALUE
625
UNIT
K/W
2002 Feb 04
3
NXP Semiconductors
Product data sheet
PNP general purpose transistors
CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
I
CBO
PARAMETER
collector-base cut-off current
BC856W; BC857W; BC858W
CONDITIONS
V
CB
=
−30
V; I
E
= 0
V
CB
=
−30
V; I
E
= 0;
T
j
= 150
°C
MIN.
−
−
−
125
125
125
220
420
TYP.
−1
−
−
−
−
−
−
−
−75
−250
−700
−850
−650
−
−
−
−
−
MAX.
−15
−4
−100
475
800
250
475
800
−300
−600
−
−
−750
−820
3
12
−
10
UNIT
nA
μA
nA
I
EBO
h
FE
emitter-base cut-off current
DC current gain
BC856W
BC857W; BC858W
BC856AW; BC857AW
BC856BW; BC857BW
BC857CW
V
EB
=
−5
V; I
C
= 0
I
C
=
−2
mA; V
CE
=
−5
V
V
CEsat
collector-emitter saturation voltage
I
C
=
−10
mA; I
B
=
−0.5
mA
−
I
C
=
−100
mA; I
B
=
−5
mA;
−
note 1
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
V
BEsat
base-emitter saturation voltage
I
C
=
−10
mA; I
B
=
−0.5
mA
−
I
C
=
−100
mA; I
B
=
−5
mA;
−
note 1
V
BE
C
c
C
e
f
T
F
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
=
−2
mA; V
CE
=
−5
V
I
C
=
−10
mA; V
CE
=
−5
V
V
CB
=
−10
V; I
E
= I
e
= 0;
f = 1 MHz
V
EB
=
−0.5
V; I
C
= I
c
= 0;
f = 1 MHz
V
CE
=
−5
V; I
C
=
−10
mA;
f = 100 MHz
I
C
=
−200 μA;
V
CE
=
−5
V;
R
S
= 2 kΩ; f = 1 kHz;
B = 200 Hz
−600
−
−
−
100
−
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
2002 Feb 04
4
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