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HYB3164400ATL-60

Description
Fast Page DRAM, 16MX4, 60ns, CMOS, PDSO32
Categorystorage    storage   
File Size247KB,26 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

HYB3164400ATL-60 Overview

Fast Page DRAM, 16MX4, 60ns, CMOS, PDSO32

HYB3164400ATL-60 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFAST PAGE
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
JESD-30 codeR-PDSO-G32
memory density67108864 bi
Memory IC TypeFAST PAGE DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals32
word count16777216 words
character code16000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
refresh cycle8192
self refreshYES
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
16M x 4-Bit Dynamic RAM
(4k & 8k Refresh)
HYB 3164400AJ/AT(L) -40/-50/-60
HYB 3165400AJ/AT(L) -40/-50/-60
Advanced Information
16 777 216 words by 4-bit organization
0 to 70 °C operating temperature
Fast Page Mode operation
Performance:
-40
t
RAC
t
CAC
t
AA
t
RC
t
PC
RAS access time
CAS access time
Access time from address
Read/write cycle time
Fast page mode cycle time
40
10
20
75
30
-50
50
13
25
90
35
-60
60
15
30
110
40
ns
ns
ns
ns
ns
Single + 3.3 V (± 0.3V) power supply
Low power dissipation:
max. 396 mW active ( HYB 3164400AJ/AT(L) -40)
max. 324 mW active ( HYB 3164400AJ/AT(L) -50)
max. 270 mW active ( HYB 3164400AJ/AT(L) -60)
max. 558 mW active ( HYB 3165400AJ/AT(L) -40)
max. 468 mW active ( HYB 3165400AJ/AT(L) -50)
max. 378 mW active ( HYB 3165400AJ/AT(L) -60)
7.2 mW standby (LVTTL)
3.24 mW standby (LVCMOS)
720
µW
standby for L-versions
Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh and self refresh (L-version only)
8192 refresh cycles/128 ms , 13 R/ 11C addresses (HYB 3164400AJ/AT)
4096 refresh cycles/ 64 ms , 12 R/ 12C addresses (HYB 3165400AJ/AT)
256 msec refresh period for L-versions
Plastic Package
P-SOJ-32-1
400 mil
P-TSOPII-32-1 400 mil
HYB 3164(5)400AJ
HYB 3164(5)400AT
Semiconductor Group
1
6.97

HYB3164400ATL-60 Related Products

HYB3164400ATL-60 HYB3164400ATL-50 HYB3164400ATL-40 HYB3165400ATL-40 HYB3165400ATL-50
Description Fast Page DRAM, 16MX4, 60ns, CMOS, PDSO32 Fast Page DRAM, 16MX4, 50ns, CMOS, PDSO32 Fast Page DRAM, 16MX4, 40ns, CMOS, PDSO32 Fast Page DRAM, 16MX4, 40ns, CMOS, PDSO32 Fast Page DRAM, 16MX4, 50ns, CMOS, PDSO32
Reach Compliance Code unknow unknow unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
access mode FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE
Maximum access time 60 ns 50 ns 40 ns 40 ns 50 ns
Other features RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
JESD-30 code R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32
memory density 67108864 bi 67108864 bi 67108864 bit 67108864 bit 67108864 bit
Memory IC Type FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM
memory width 4 4 4 4 4
Number of functions 1 1 1 1 1
Number of ports 1 1 1 1 1
Number of terminals 32 32 32 32 32
word count 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words
character code 16000000 16000000 16000000 16000000 16000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C
organize 16MX4 16MX4 16MX4 16MX4 16MX4
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 8192 8192 8192 4096 4096
self refresh YES YES YES YES YES
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL
Base Number Matches 1 1 1 1 -
Maker - - SIEMENS SIEMENS SIEMENS
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