EEWORLDEEWORLDEEWORLD

Part Number

Search

RN5001

Description
Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications
CategoryDiscrete semiconductor    The transistor   
File Size133KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

RN5001 Overview

Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications

RN5001 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeSC-62
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)50
JESD-30 codeR-PSSO-F3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power consumption environment1 W
Maximum power dissipation(Abs)0.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
VCEsat-Max0.5 V
Base Number Matches1
RN5001
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN5001
Motor Drive Circuit Applications
Power Amplifier Applications
Power Switching Applications
l
With built-in bias resistors
l
Simplify circuit design
l
Reduce a quantity of parts and manufacturing process
l
Small flat package
l
P
C
= 1~2W (mounted on ceramic substrate)
l
Complementary to RN6001
Unit: mm
Equivalent Circuit
JEDEC
JEITA
TOSHIBA
Weight: 0.05g (typ.)
SC-62
2-5K1A
Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
*
T
j
T
stg
Rating
30
30
5
2
0.4
500
1000
150
−55~150
Unit
V
V
V
A
A
mW
mW
°C
°C
Marking
*
: Mounterd on ceramic substrate (250mm
2
× 0.8t)
1
2001-10-29

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1626  204  769  1262  2402  33  5  16  26  49 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号