DAN222, NSVDAN222
Common Cathode Silicon
Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SOT−416/SC−75 package which is designed
for low power surface mount applications, where board space is at a
premium.
Features
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CATHODE
3
•
Fast t
rr
•
Low C
D
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
ANODE
2
1
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Reverse Voltage
Peak Reverse Voltage
Forward Current
Peak Forward Current
Peak Forward Surge Current (Note 1)
Symbol
V
R
V
RM
I
F
I
FM
I
FSM
Value
80
80
100
300
2.0
Unit
Vdc
Vdc
mAdc
mAdc
Adc
SC−75/SOT−416
CASE 463
STYLE 3
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
P
D
T
J
T
stg
Max
150
150
−55
to +150
Unit
mW
°C/W
°C
1
N9 M
G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1
mS
N9
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
DAN222G
DAN222T1G
NSVDAN222T1G
Package
SC−75
(Pb−Free)
SC−75
(Pb−Free)
SC−75
(Pb−Free)
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
September, 2013
−
Rev. 7
1
Publication Order Number:
DAN222/D
DAN222, NSVDAN222
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
Characteristic
Reverse Voltage Leakage Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
2. t
rr
Test Circuit on following page.
Symbol
I
R
V
F
V
R
C
D
t
rr
(Note 2)
Condition
V
R
= 70 V
I
F
= 100 mA
I
R
= 100
mA
V
R
= 6.0 V, f = 1.0 MHz
I
F
= 5.0 mA, V
R
= 6.0 V, R
L
= 100
W,
I
rr
= 0.1 I
R
Min
−
−
80
−
−
Max
0.1
1.2
−
3.5
4.0
Unit
mAdc
Vdc
Vdc
pF
ns
TYPICAL ELECTRICAL CHARACTERISTICS
100
IF, FORWARD CURRENT (mA)
T
A
= 85°C
10
T
A
= - 40°C
IR , REVERSE CURRENT (μA)
10
T
A
= 150°C
1.0
T
A
= 125°C
T
A
= 85°C
0.1
T
A
= 55°C
0.01
T
A
= 25°C
1.0
T
A
= 25°C
0.1
0.2
0.4
0.6
0.8
1.0
V
F
, FORWARD VOLTAGE (VOLTS)
1.2
0.001
0
10
20
30
40
V
R
, REVERSE VOLTAGE (VOLTS)
50
Figure 1. Forward Voltage
Figure 2. Reverse Current
1.0
CD , DIODE CAPACITANCE (pF)
0.9
0.8
0.7
0.6
0
2
4
6
8
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
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2
DAN222, NSVDAN222
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463
ISSUE F
−E−
2
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
e
1
−D−
b
3 PL
0.20 (0.008)
M
D
H
E
0.20 (0.008) E
DIM
A
A1
b
C
D
E
e
L
H
E
MILLIMETERS
MIN
NOM MAX
0.70
0.80
0.90
0.00
0.05
0.10
0.15
0.20
0.30
0.10
0.15
0.25
1.55
1.60
1.65
0.70
0.80
0.90
1.00 BSC
0.10
0.15
0.20
1.50
1.60
1.70
INCHES
NOM MAX
0.031 0.035
0.002 0.004
0.008 0.012
0.006 0.010
0.063 0.067
0.031 0.035
0.04 BSC
0.004 0.006 0.008
0.061 0.063 0.065
MIN
0.027
0.000
0.006
0.004
0.059
0.027
C
A
L
A1
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
SCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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