EML11 / UML11N
Transistors
General purpose transistor
(isolated transistor and diode)
EML11 / UML11N
2SA1774 and a RB521S-30 are housed independently in a EMT5 or UMT5 package.
Applications
DC / DC converter
Motor driver
External dimensions
(Unit : mm)
EMT5
1.6
0.5
1pin mark
Features
1) Tr2: Small Signal Transistor
Di1: Low V
F
2) Small package
1.0
0.5 0.5
(5) (4)
1.6
1.2
(1) (2) (3)
0.22
0.13
Each lead has same dimensions
Structure
Silicon epitaxial planar transistor
Schottky barrier diode
Abbreviated symbol : L11
ROHM : EMT5
The following characteristics apply to both Di1 and Tr2.
UMT5
2.0
1.3
0.65 0.65
0.9
0.7
Equivalent circuit (EML11 / UML11N)
(5)
(4)
1pin mark
(5) (4)
1.25
(1) (2) (3)
2.1
0.2
0.15
Di1
Tr2
Each lead has same dimensions
Abbreviated symbol : L11
(1)
(2)
(3)
ROHM : UMT5
EIAJ : SC-88A
Packaging specifications
Type
EML11
EMT5
L11
T2R
8000
UML11N
UMT5
L11
TR
3000
Package
Marking
Code
Basic ordering unit(pieces)
Rev.B
0.1Min.
1/4
EML11 / UML11N
Transistors
Absolute maximum ratings
(Ta=25°C)
Di1
Parameter
Symbol
I
O
Average rectified forward current
I
FSM
Forward current surge peak (60H
Z
, 1∞)
V
R
Reverse voltage (DC)
Tj
Junction temperature
Limits
200
1
30
125
Unit
mA
A
V
°C
Tr2
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
Tj
Limits
−60
−50
−6
−150
120
150
Unit
V
V
V
mA
mW
∗
°C
∗
Each terminal mounted on a recommended.
Di1 / DTr2
Parameter
Power dissipation
Storage temperature
Limits
Symbol
150
P
d
−55
to +125
Tstg
Unit
mW
∗
°C
∗
Each terminal mounted on a recommended.
Electrical characteristics
(Ta=25°C)
Di1
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Min.
−
−
Typ.
0.40
4.0
Max.
0.50
30
Unit
V
µA
I
F
=200mA
V
R
=10V
Conditions
Tr2
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−60
−50
−6
−
−
−
180
−
−
Typ.
−
−
−
−
−
−
−
140
4.0
Max.
−
−
−
−100
−100
−500
390
−
5.0
Unit
V
V
V
nA
nA
mV
−
MHz
pF
I
C
=−50µA
I
C
=−1mA
I
E
=−50µA
V
CB
=−60V
V
EB
=−6V
I
C
/I
B
=−50mA/−5mA
V
CE
=−6V,
I
C
=−1mA
V
CE
=−12V,
I
E
=2mA,
f=100MHz
V
CB
=−12V,
I
E
=0A,
f=1MHz
Conditions
Rev.B
2/4
EML11 / UML11N
Transistors
Electrical characteristic curves
Di1
1000
100000
100
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
f=1MHz
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
10 Ta=75℃
1
0.1
0.01
1000
100
10
1
0.1
0.01
Ta=-25℃
Ta=25℃
0.001
0
100
200
300
400
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
500
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
100
Ta=125℃
10000
10
0
10
20
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
30
1
0
5
10
15
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
20
Tr2
-50
COLLECTOR CURRENT : Ic
(mA)
COLLECTOR CURRENT : I
C
(mA)
-31.5
-28.0
-24.5
COLLECTOR CURRENT : I
C
(mA)
Ta = 100°C
25°C
-20
−
40°C
-10
-5
-2
-1
-0.5
-0.2
-0.1
V
CE
=
−6V
-10
-35.0
Ta = 25°C
-100
Ta = 25°C
-500
-450
-400
-350
-300
-8
-80
-6
-21.0
-17.5
-60
-250
-200
-4
-14.0
-10.5
-40
-150
-100
-2
-7.0
-3.5µA
I
B
= 0
-20
-50µA
I
B
= 0
0
-1
-2
-3
-4
-5
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
0
-0.4
-0.8
-1.2
-1.6
-2.0
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics (
Ι
)
Fig.3 Grounded emitter output
characteristics (
ΙΙ
)
500
Ta = 25°C
V
CE
= -5V
-3V
-1V
DC CURRENT GAIN : h
FE
500
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
-1
Ta = 100°C
25°C
200
Ta = 25°C
DC CURRENT GAIN : h
FE
-0.5
200
-40°C
-0.2
100
100
I
C
/I
B
= 50
-0.1
20
10
50
50
-0.05
V
CE
= -6V
-0.2
-0.5
-1
-2
-5
-10 -20
-50 -100
-0.2
-0.5
-1
-2
-5
-10 -20
-50 -100
-0.2
-0.5
-1
-2
-5
-10
-20
-50 -100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector
current (
Ι
)
Fig.5 DC current gain vs. collector
current (
ΙΙ
)
Fig.6 Collector-emitter saturation
voltage vs. collector current (
Ι
)
Rev.B
3/4
EML11 / UML11N
Transistors
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
-1
1000
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE
: Cib (
pF)
TRANSITION FREQUENCY : f
T
(MHz)
l
C
/l
B
= 10
Ta = 25
°C
V
CE
= -12V
20
Cib
10
-0.5
500
Ta = 25
°C
f
=
1MHz
I
E
= 0A
I
C
= 0A
Co
b
-0.2
200
5
-0.1
Ta = 100°C
25°C
-40°C
100
2
-0.05
50
0.5
1
2
5
10
-0.2
-0.5
-1
-2
-5
-10
-20
-50 -100
20
50
100
-0.5
-1
-2
-5
-10
-20
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
E
(mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
Fig.7 Collector-emitter saturation
voltage vs. collector current (
ΙΙ
)
Fig.8 Gain bandwidth product vs.
emitter current
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Rev.B
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
Embedded System
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