DA108S1
DA112S1
Diode array
Features
■
■
■
Array of 8 or 12 diodes
Low input capacitance
Suitable for digital line protection
Complies with following standards:
■
IEC 61000-4-2 Level 4
– 15kV (air discharge)
– 8kV (contact discharge)
SO-8
Figure 1.
Functional diagram: DA108S1
Applications
■
■
■
Protection of logic side of ISDN S-interface
Protection of I/O lines of microcontroller
Signal conditioning
I/O1
I/O2
I/O3
I/O4
REF1
REF2
REF3
REF4
Description
Array of 8 or 12 diodes configured by cells of 2
diodes, each cell being used to protect signal line
from transient overvoltages by clamping action.
As maximum voltage of each diode is 18 V,
maximum input voltage range between two I/Os is
either 0 V to 18 V (REF1 = 0 V and REF2 =
+18 V) or -9 V to +9 V (REF1 = -9 V and REF2 =
+9 V)
Figure 2.
Functional diagram: DA112S1
I/O1 1
I/O2
I/O3
I/O4
2
3
4
8
7
REF1
I/O6
6 REF2
5 I/O5
January 2008
Rev 6
1/8
www.st.com
Characteristics
DA108S1 / DA112S1
1
Table 1.
Symbol
V
RRM
I
PP
P
T
stg
T
j
T
L
Characteristics
Absolute maximum ratings (T
amb
= 25
°C
)
Parameter
Repetitive peak reverse voltage (for one single diode)
Repetitive peak forward current
(1)
Power dissipation
Storage temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10 s.
t
p
= 8/20 µs
Value
18
12
0.73
-55 to +150
-55 to +150
260
Unit
V
A
W
°C
°C
°C
1. The surge is repeated after the device returns to ambient temperature
Table 2.
Symbol
R
th (j-a)
Thermal resistance
Parameter
Junction to ambient
Value
170
Unit
°C/W
Table 3.
Symbol
V
FP
V
F
I
R
Electrical characteristics(T
amb
= 25
°C
)
Parameter
Peak forward voltage
Forward voltage
Reverse leakage current
I
PP
= 12 A,
t
p
= 8/20 µs
I
F
= 50 mA
V
R
= 15 V
DA108S1
DA112S1
Max.
9
V
12
1.2
2
V
µA
Unit
1.
2/8
DA108S1 / DA112S1
Figure 3.
Input capacitance
Characteristics
V
CC
connected between REF1 and REF2
36
Input applied :
DC bias + 950 mV
(RMS)
at 1 MHZ
C (pF)
Typical values
VCC 5 V
=
VCC 15 V
=
34
32
REF2
30
28
I/O
V CC
G
REF1
26
24
22
0
2
4
6
8
10
12
14
16
DC bias (V)
Figure 4.
V
F
(V)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Typical peak forward voltage characteristics (8/20 µs pulse)
Typical values
Tj = 25
o
C
0.001
0.01
I
F
(A)
0.1
1
V
F
(V)
10.0
9.0
o
Tj = 25 C
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
1
Typical values
I
F
(A)
10
20
3/8
Characteristics
Figure 5.
DA108S1 / DA112S1
Application 1: ISDN interface protection, residual lightning surges at
transformer secondary are suppressed by DA108S1
LOGIC SIDE
Vcc
LINE SIDE
A
GND
Vcc
Vss
Vcc
Vss
TPIxx
B
A
GND
Vss
Vcc
TPIxx
B
Vss
DA1xx S1
Figure 6.
Application 2: microcontroller I/O port protection
Vcc
Vcc
4-6 bit input port
I/O
Vcc
I/O
Vcc
μc
I/O
Vcc
I/O
DA1xx S1
Note:
IMPORTANT
: DA108S1 must be connected to the reference voltages through REF1 and
REF2.
4/8
DA108S1 / DA112S1
Ordering information scheme
2
Ordering information scheme
Figure 7.
Ordering information scheme
DA 1 08 S
Diode Array
Version
Number of diodes
08 = 12
12 = 12
Serial
Package
1 = SO-8
Packaging
RL = Tape and reel
Blank = Tube
1 RL
5/8
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