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FDD86580_F085 N-Channel PowerTrench® MOSFET
April 2016
FDD86580_F085
N-Channel PowerTrench
®
MOSFET
60 V, 50 A, 10 mΩ
Features
Typical R
DS(on)
= 7.8 mΩ at V
GS
= 10V, I
D
= 50 A
Typical Q
g(tot)
= 20 nC at V
GS
= 10V, I
D
= 50 A
UIS Capability
RoHS Compliant
Qualified to AEC Q101
D
Applications
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Electronic Steering
Integrated Starter/Alternator
Distributed Power Architectures and VRM
Primary Switch for 12V Systems
G
S
D
G
D-PAK
TO-252
(TO-252)
S
For current package drawing, please refer to the Fairchild web‐
site at http://www.fairchildsemi.com/package‐drawings/TO/
TO252A03.pdf.
MOSFET Maximum Ratings
T
J
= 25°C unless otherwise noted.
Symbol
Drain-to-Source Voltage
V
DSS
V
GS
I
D
E
AS
P
D
R
θJC
R
θJA
Gate-to-Source Voltage
Drain Current - Continuous (V
GS
=10) (Note 1)
Pulsed Drain Current
Single Pulse Avalanche Energy
Power Dissipation
Derate Above 25
o
C
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
(Note 3)
T
C
= 25°C
T
C
= 25°C
(Note 2)
Parameter
Ratings
60
±20
50
See Figure 4
24
75
0.5
-55 to + 175
2.0
52
o
o
Units
V
V
A
mJ
W
W/
o
C
o
T
J
, T
STG
Operating and Storage Temperature
C
C/W
C/W
Notes:
1: Current is limited by bondwire configuration.
2: Starting T
J
= 25°C, L = 30
μ
H, I
AS
= 40A, V
DD
= 60V during inductor charging and V
DD
= 0V during time in avalanche.
3: R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. R
θJC
is guaranteed by design, while R
θJA
is determined by the board design. The maximum rating
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