80mW - 650V SiC Cascode | UJ3C065080K3S
Datasheet
Description
United Silicon Carbide's cascode products co-package its high-
performance G3 SiC JFETs with a cascode optimized MOSFET to produce
the only standard gate drive SiC device in the market today. This series
exhibits ultra-low gate charge, but also the best reverse recovery
characteristics of any device of similar ratings. These devices are
excellent for switching inductive loads, and any application requiring
standard gate drive.
CASE
CASE
D (2)
G (1)
1 2 3
Part Number
UJ3C065080K3S
S (3)
Package
TO-247-3L
Marking
UJ3C065080K3S
Features
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w
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Typical on-resistance R
DS(on),typ
of 80mW
Maximum operating temperature of 175°C
Excellent reverse recovery
Low gate charge
Low intrinsic capacitance
ESD protected, HBM class 2
Typical Applications
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EV charging
PV inverters
Switch mode power supplies
Power factor correction modules
Motor drives
Induction heating
Maximum Ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
1
Pulsed drain current
2
Single pulsed avalanche energy
3
Power dissipation
Maximum junction temperature
Operating and storage temperature
Max. lead temperature for soldering,
1/8” from case for 5 seconds
1
2
3
Limited by T
J,max
Pulse width t
p
limited by T
J,max
Starting T
J
= 25°C
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
P
tot
T
J,max
T
J
, T
STG
T
L
DC
T
C
=25°C
T
C
=100°C
T
C
=25°C
L=15mH, I
AS
=2.1A
T
C
=25°C
Test Conditions
Value
650
-25 to +25
31
23
65
33
190
175
-55 to 175
250
Units
V
V
A
A
A
mJ
W
°C
°C
°C
Preliminary, November 2017
1
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80mW - 650V SiC Cascode | UJ3C065080K3S
Datasheet
Electrical Characteristics
(T
J
= +25°C unless otherwise specified)
Typical Performance - Static
Parameter
Drain-source breakdown voltage
Symbol
BV
DS
Test Conditions
V
GS
=0V, I
D
=1mA
V
DS
=650V,
V
GS
=0V, T
J
=25°C
V
DS
=650V,
V
GS
=0V, T
J
=175°C
V
DS
=0V, T
j
=25°C,
V
GS
=-20V / +20V
V
GS
=12V, I
D
=20A,
T
J
=25°C
V
GS
=12V, I
D
=20A,
T
J
=175°C
V
DS
=5V, I
D
=10mA
f=1MHz, open drain
4
Value
Min
650
Typ
Max
Units
V
6
40
6
80
141
5
4.5
6
V
W
20
100
mW
mA
100
mA
Total drain leakage current
I
DSS
Total gate leakage current
I
GSS
Drain-source on-resistance
R
DS(on)
Gate threshold voltage
Gate resistance
V
G(th)
R
G
Typical Performance - Reverse Diode
Parameter
Diode continuous forward current
1
Diode pulse current
2
Symbol
I
S
I
S,pulse
Test Conditions
T
C
=25°C
T
C
=25°C
V
GS
=0V, I
F
=10A,
T
J
=25°C
V
GS
=0V, I
F
=10A,
T
J
=175°C
V
R
=400V, I
F
=20A,
V
GS
=0V, R
G_EXT
=20W
di/dt=1600A/ms,
T
J
=150°C
1.5
1.75
111
16
nC
ns
Value
Min
Typ
Max
31
65
2
V
Units
A
A
Forward voltage
V
FSD
Reverse recovery charge
Reverse recovery time
Q
rr
t
rr
Preliminary, November 2017
2
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80mW - 650V SiC Cascode | UJ3C065080K3S
Datasheet
Typical Performance - Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance, energy related
Effective output capacitance, time related
C
OSS
stored energy
Total gate charge
Gate-drain charge
Gate-source charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
symbol
C
iss
C
oss
C
rss
C
oss(er)
C
oss(tr)
E
oss
Q
G
Q
GD
Q
GS
t
d(on)
t
r
t
d(off)
t
f
E
ON
E
OFF
E
TOTAL
V
DS
=400V, I
D
=20A, Gate
Driver=-5V to +15V,
Turn-on R
G,EXT
=1W,
Turn-off R
G,EXT
=20W
Inductive Load,
FWD: UJ3D06510TS
T
J
=150°C
Test Conditions
V
DS
=100V,
V
GS
=0V,
f=100kHz
V
DS
=0V to 400V,
V
GS
=0V
V
DS
=0V to 400V,
V
GS
=0V
V
DS
=400V, V
GS
=0V
V
DS
=400V, I
D
=20A,
V
GS
=-5V to 15V
Value
Min
Typ
1500
104
2.6
77
176
6.2
51
11
19
18
13
59
11
85
62
147
mJ
ns
Max
Units
pF
pF
pF
mJ
nC
Thermal Characteristics
Parameter
Thermal resistance, junction-to-case
symbol
R
qJC
Test Conditions
Value
Min
Typ
0.61
Max
0.79
Units
°C/W
Preliminary, November 2017
3
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80mW - 650V SiC Cascode | UJ3C065080K3S
Datasheet
Typical Performance Diagrams
60
50
Drain Current, I
D
(A)
40
30
20
10
0
0
1
2
3
4
5
6
7
8
9
Drain-Source Voltage, V
DS
(V)
10
Drain Current, I
D
(A)
Vgs = 15V
Vgs = 8V
Vgs = 7.5V
60
50
40
Vgs = 15V
30
20
10
0
0
1
2
3
4
5
6
7
8
9
Drain-Source Voltage, V
DS
(V)
10
Vgs = 8V
Vgs = 7V
Vgs = 6.5V
Vgs = 6V
Vgs = 7V
Vgs = 6.5V
Figure 1 Typical output characteristics
at T
J
= - 55°C, tp < 250
m
s
60
50
Drain Current, I
D
(A)
40
30
20
10
0
0
1
2
3
4
5
6
7
8
9
Drain-Source Voltage, V
DS
(V)
10
Figure 2 Typical output characteristics
at T
J
= 25°C, tp < 250
m
s
2.0
On Resistance, R
DS_ON
(P.U.)
Vgs = 15V
Vgs = 7V
Vgs = 6.5V
Vgs = 6V
Vgs = 5.5V
Vgs = 5V
1.5
1.0
0.5
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
Junction Temperature, T
J
(°C)
Figure 3 Typical output characteristics
at T
J
= 175°C, tp < 250
m
s
Figure 4 Normalized on-resistance vs.
temperature at V
GS
= 12V and
I
D
= 20A
Preliminary, November 2017
4
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80mW - 650V SiC Cascode | UJ3C065080K3S
Datasheet
300
On-Resistance, R
DS(on)
(mW)
250
200
150
100
50
0
0
10
20
30
40
Drain Current, I
D
(A)
50
60
Tj = 175°C
Tj = 25°C
Tj = - 55°C
40
Tj = -55°C
Drain Current, I
D
(A)
30
Tj = 25°C
Tj = 175°C
20
10
0
0
1
2 3 4 5 6 7 8 9
Gate-Source Voltage, V
GS
(V)
10
Figure 5 Typical drain-source
on-resistance at V
GS
= 12V
Figure 6 Typical transfer characteristics
at V
DS
= 5V
6
Threshold Voltage, V
th
(V)
5
4
3
2
1
0
-100
Gate-Source Voltage, V
GS
(V)
-50
0
50
100
150
Junction Temperature, T
J
(°C)
200
20
15
10
5
0
-5
0
10
20
30
40
Gate Charge, Q
G
(nC)
50
60
Figure 7 Threshold voltage vs. T
J
at V
DS
= 5V and I
D
= 10mA
Figure 8 Typical gate charge
at V
DS
= 400V and I
D
= 20A
Preliminary, November 2017
5
For more information go to www.unitedsic.com.
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