BR93G46FVT-3GE2 datasheet, PDF

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BR93G46FVT-3GE2: DescriptionEEPROM Microwire BUS 1Kbit(64x16bit); Categorystorage storage; File Size1MB，40 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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BR93G46FVT-3GE2 Overview

EEPROM Microwire BUS 1Kbit(64x16bit)

BR93G46FVT-3GE2 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	TSSOP,
Reach Compliance Code	compliant
Factory Lead Time	11 weeks
Other features	IT ALSO OPERATES AT 1MHZ AT 1.7 MIN
Spare memory width	8
Maximum clock frequency (fCLK)	3 MHz
JESD-30 code	R-PDSO-G8
JESD-609 code	e3
length	4.4 mm
memory density	1024 bit
Memory IC Type	EEPROM
memory width	16
Number of functions	1
Number of terminals	8
word count	64 words
character code	64
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	64X16
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial	SERIAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum seat height	1.2 mm
Serial bus type	3-WIRE
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	3 mm
Maximum write cycle time (tWC)	5 ms
Base Number Matches	1

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Datasheet

Serial EEPROM series Standard EEPROM

MicroWire BUS EEPROM (3-Wire)

BR93G46-3

●General

Description

BR93G46-3 is serial EEPROM of serial 3-line Interface method.

They are dual organization(by 16bit or 8bit) and it is selected by the input of ORG PIN.

●Features

■

3-line communications of chip select, serial clock,

serial data input / output (the case where input and

output are shared)

■

Operations available at high speed 3MHz clock

(4.5 V~5.5 V)

■

High speed write available (write time 5ms max.）

■

Same package and pin configuration from 1Kbit to

16Kbit

■

1.7~5.5V single power source operation

■

Address auto increment function at read operation

■

Write mistake prevention function

» Write prohibition at power on

» Write prohibition by command code

» Write mistake prevention function at low voltage

■

Self-timed programming cycle

■

Program condition display by READY / BUSY

■

Dual organization : by 16 bit (X16) or 8 bit (X8)

■

Compact package

SOP8/SOP-J8/SSOP-B8/TSSOP-B8/MSOP8/

TSSOP-B8J/DIP-T8/VSON008X2030

■

More than 40 years data retention

■

More than 1 million write cycles

■

Initial delivery state all addresses FFFFh (X16) or

FFh (X8)

●Packages

W(Typ.) x D(Typ.)x H(Max.)

DIP-T8

9.30mm x 6.50mm x 7.10mm

TSSOP-B8

3.00mm x 6.40mm x 1.20mm

SOP8

5.00mm x 6.20mm x 1.71mm

TSSOP-B8J

3.00mm x 4.90mm x 1.10mm

SOP- J8

4.90mm x 6.00mm x 1.65mm

MSOP8

2.90mm x 4.00mm x 0.90mm

SSOP-B8

3.00mm x 6.40mm x 1.35mm

VSON008X2030

2.00mm x 3.00mm x 0.60mm

●BR93G46-3

Capacity

1Kbit

Bit format

64×16 or128×8

Type

BR93G46-3

Power source

DIP-T8

SOP8

voltage

1.7

5.5V

SOP-J8

SSOP-B8 TSSOP-B8

TSSOP-B8J MSOP8

VSON008

X2030

●

*1 DIP-T8 is not halogen free package

○Product

structure：Silicon monolithic integrated circuit

www.rohm.com

TSZ22111・14・001

○This

product is not designed protection against radioactive rays

1/36

TSZ02201-09190G100130-1-2

19.JULY.2017 REV.002

BR93G46FVT-3GE2 Related Products

	BR93G46FVT-3GE2	BR93G46FVM-3GTTR	BR93G46F-3GTE2
Description	EEPROM Microwire BUS 1Kbit(64x16bit)	EEPROM Microwire BUS 1Kbit(64x16bit)	EEPROM Microwire BUS 1Kbit(64x16bit)
Is it Rohs certified?	conform to	conform to	conform to
package instruction	TSSOP,	VSSOP,	SOP,
Reach Compliance Code	compliant	compliant	compliant
Factory Lead Time	11 weeks	10 weeks	11 weeks
Other features	IT ALSO OPERATES AT 1MHZ AT 1.7 MIN	IT ALSO OPERATES AT 1MHZ AT 1.7 MIN	IT ALSO OPERATES AT 1MHZ AT 1.7 MIN
Spare memory width	8	8	8
Maximum clock frequency (fCLK)	3 MHz	3 MHz	3 MHz
JESD-30 code	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8
JESD-609 code	e3	e3	e3
length	4.4 mm	2.9 mm	5 mm
memory density	1024 bit	1024 bit	1024 bit
Memory IC Type	EEPROM	EEPROM	EEPROM
memory width	16	16	16
Number of functions	1	1	1
Number of terminals	8	8	8
word count	64 words	64 words	64 words
character code	64	64	64
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C
organize	64X16	64X16	64X16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSSOP	VSSOP	SOP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	SMALL OUTLINE
Parallel/Serial	SERIAL	SERIAL	SERIAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum seat height	1.2 mm	0.9 mm	1.71 mm
Serial bus type	3-WIRE	3-WIRE	3-WIRE
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V
surface mount	YES	YES	YES
technology	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	Tin (Sn)	Tin (Sn)	Tin (Sn)
Terminal form	GULL WING	GULL WING	GULL WING
Terminal pitch	0.65 mm	0.65 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	3 mm	2.8 mm	4.4 mm
Maximum write cycle time (tWC)	5 ms	5 ms	5 ms
Base Number Matches	1	1	1

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