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DZD10

Description
10 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CategoryDiscrete semiconductor    diode   
File Size69KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

DZD10 Overview

10 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

DZD10 Parametric

Parameter NameAttribute value
MakerSANYO
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance15 Ω
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation0.2 W
Certification statusNot Qualified
Nominal reference voltage10 V
surface mountYES
technologyZENER
Terminal formGULL WING
Terminal locationDUAL
Maximum voltage tolerance6%
Working test current5 mA
Ordering number:EN2128C
DZD2.0 to 24
Silicon Planar Type
0.2W Zener Diodes
Features
· Reference voltage use.
· Votlage regulators use.
· Power dissipation : P=200mW.
· Voltage range :
±2.5%
subdivided.
· High reliability due to planar type.
· Ideally suited for use in hybrid ICs because of ultra
small package.
Package Dimensions
unit:mm
1148A
[DZD2.0 to 24]
1:Anode
2:No Connection
3:Cathode
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
P
Tj
Tstg
Conditions
SANYO:CP
Ratings
200
150
–55 to +150
Unit
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Type No.
Zener voltage VZ will be subdivided into X, Y, Z at your request.
Zener Characteristics
Reverse Current
Dynamic Resistance
rd [Ω]
f=1kHz
Test
Current
IR
Test
Voltage
VR
[V]
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Zener Voltage VZ [V]*
min
DZD2.0
DZD2.2
DZD2.4
DZD2.7
DZD3.0
DZD3.3
1.85
2.05
2.28
2.50
2.80
3.10
max
2.15
2.38
2.60
2.90
3.20
3.50
Sub-
division
X
Z
X
Z
X
Z
X
Z
X
Z
X
Z
min
1.85
1.95
2.05
2.16
2.28
2.40
2.50
2.65
2.80
2.95
3.10
3.25
max
2.05
2.15
2.26
2.38
2.50
2.60
2.75
2.90
3.05
3.20
3.35
3.50
typ
60
60
65
65
70
70
80
80
85
85
90
90
max
100
100
100
100
100
100
110
110
120
120
130
130
[mA]
5
5
5
5
5
5
5
5
5
5
5
5
[µA]
120
120
120
120
120
120
120
120
50
50
20
20
Electrical Connection
(Top View)
1:Anode
2:No Connection
3:Cathode
Continued on next page.
* : t=30ms
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/31497GI/IR, VR/41096GI/2039TA, TS No.2128-1/4
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