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DZ23C30

Description
30 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CategoryDiscrete semiconductor    diode   
File Size26KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

DZ23C30 Overview

30 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

DZ23C30 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
Diode typeZENER DIODE
Maximum dynamic impedance80 Ω
Humidity sensitivity level1
Maximum operating temperature150 °C
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.3 W
Nominal reference voltage30 V
surface mountYES
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5%
Working test current5 mA
Base Number Matches1
AZ23C2V7
THRU
AZ23C51
Dual Surface Mount Zener Diode
Voltage Range
2.7 to 51 Volts
300m Watts Power Dissipation
Features
Dual zeners in common anode configuration
300 mW power dissipation rating
Ideally suited for automated insertion
△Vz
for both diodes in one case is
≦5%
Common cathode style available see DZ series
SOT-23
0.020(0.51)
0.015(0.37)
0.055(1.40)
0.047(1.19)
0.098(2.50)
0.083(2.10)
Mechanical Data
Case: SOT-23, Molded plastic
Terminals: Solderable per MIIL-STD-202,
Method 208
Polarity: See diagram
Marking: Marking Code (see table on Page 2)
Mounting position: Any
Weight: 0.008 grams (approx.)
0.080(2.05)
0.070(1.78)
0.024(0.61)
0.018(0.45)
0.120(3.05)
0.104(2.65)
0.041(1.05)
0.047(0.89)
0.043(1.10)
0.035(0.89)
0.007(0.178)
0.003(0.076)
0.006(0.15)
0.001(0.013)
0.024(0.61)
0.018(0.45)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air
(Note 1)
Operating and Storage Temperature Range
Symbol
Pd
R
θJA
T
J
, T
STG
Value
300
420
-65 to + 150
Units
mW
K/W
O
C
Notes: 1. Device on Fiberglass Substrate.
2. Tested with I
ZT
Current pulses. Pulse width = 5ms.
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