DSEP 60-025A
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Preliminary data sheet
V
RSM
V
250
V
RRM
V
250
DSEP 60-025A
Type
A
C
I
FAV
= 60 A
V
RRM
= 250 V
t
rr
= 30 ns
TO-247 AD
C
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
Conditions
T
C
= 120°C; rectangular, d = 0.5
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 3.5 A; L = 180 µH
V
A
= 1.5·V
R
typ.; f = 10 kHz; repetitive
Maximum Ratings
70
60
600
1.6
0.4
-55...+175
175
-55...+150
A
A
A
mJ
A
°C
°C
°C
W
Nm
g
Features
•
•
•
•
•
•
•
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
T
C
= 25°C
mounting torque
typical
230
0.8...1.2
6
Symbol
I
R
①
Conditions
T
VJ
= 25°C; V
R
= V
RRM
T
VJ
= 150°C;V
R
= V
RRM
I
F
= 60 A;
T
VJ
= 150°C
T
VJ
= 25°C
Characteristic Values
typ.
max.
650
2.5
1.07
1.31
0.65
0.25
µA
mA
V
V
K/W
K/W
ns
6
A
V
F
②
R
thJC
R
thCH
t
rr
I
RM
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low
EMI/RFI
• Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see Outlines.pdf
I
F
= 1 A; -di/dt = 300 A/µs;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 130 A; -di
F
/dt = 100 A/µs
T
VJ
= 100°C
30
5
Pulse test:
①
Pulse Width = 5 ms, Duty Cycle < 2.0 %
②
Pulse Width = 300
µ
s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
237
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
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