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DY80F

Description
12 A, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size48KB,2 Pages
ManufacturerEDI [Electronic devices inc.]
Download Datasheet Parametric View All

DY80F Overview

12 A, SILICON, BRIDGE RECTIFIER DIODE

DY80F Parametric

Parameter NameAttribute value
MakerEDI [Electronic devices inc.]
package instructionO-PUFM-D4
Reach Compliance Codeunknow
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-PUFM-D4
Maximum non-repetitive peak forward current400 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Maximum output current12 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
DY-F
MINIBRIDGE
12 AMPERES HIGH SURGE
PY-F
TAB TERMINALS SINGLE-PHASE FULL-WAVE BRIDGES
HEAT SINK AND CHASSIS MOUNTING
T
pr his
og m
ra ar
m ki
of nd
U ica
nd te
er s
w re
rit co
er g
s ni
La tio
bo n
ra u n
to de
rie r
s, the
in c
c. o m
po
ne
nt
PRV/Leg
Type No.
Type No.
50V
PY05F
DY05F
100V
PY 10F
DY 10F
200V
PY 20F
DY 20F
400V
PY 40F
DY 40F
600V
PY 60F
DY 60F
800V
PY 80F
DY 80F
1000V
PY100F
DY100F
ELECTRICAL CHARACTERISTICS PER LEG
(at T
A
=25 C Unl es s Oth erw ise Spe ci fie d)
PY-F
12
10
100
300
5.1Typ.
-55 to +150
DY-F
12
10
100
400
5.1
-55 to +150
Amp
A
A
Max.Forward Voltage Drop V
F
=1.0 V @ I
F
=
Max. DC Reverse Current @ PRV and 25 C, I
R
Max. DC Reverse Current @ PRV and 100
o
C, I
R
Max. Peak Surge Current,I
FSM
(8.3
ms)
-
Thermal Resistance (Total Bridge), R0 j-c
o
Amp
o
C/ W
o
Storage Temperature Range, T
STG
C
EDI reserves the right to change these specifications at any time without notice.

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