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2SB891

Description
LOW FREQ. POWER AMP. EPITAXIAL PLANAR PNP SILICON TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size267KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet Parametric View All

2SB891 Overview

LOW FREQ. POWER AMP. EPITAXIAL PLANAR PNP SILICON TRANSISTOR

2SB891 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codecompli
Maximum collector current (IC)2 A
ConfigurationSingle
Minimum DC current gain (hFE)82
JESD-609 codee0
Polarity/channel typePNP
Maximum power dissipation(Abs)5 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)100 MHz
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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