Si596
D
U A L
F
REQUENCY
V
OLTAGE
- C
ON TROLLED
C
R Y S TA L
O
SCILLATOR
( V C X O ) 1 0
TO
810 MH
Z
Features
Available with any-rate output
frequencies from 10 to 810 MHz
Two selectable output frequencies
3
rd
generation DSPLL
®
with
superior jitter performance
Internal fixed fundamental mode
crystal frequency ensures high
reliability and low aging
Available CMOS, LVPECL,
LVDS, and CML outputs
3.3, 2.5, and 1.8 V supply options
Industry standard 5x7 and
3.2x5 mm packages
Pb-free/RoHS-compliant
–40 to +85 ºC operating range
Si5602
Applications
Ordering Information:
SONET/SDH (OC-3/12/48)
Networking
SD/HD SDI/3G SDI video
FTTx
Clock recovery and jitter cleanup PLLs
FPGA/ASIC clock generation
See page 8.
Pin Assignments:
See page 7.
(Top View)
V
C
1
2
3
6
5
4
V
DD
CLK–
CLK+
Description
The Si596 dual-frequency VCXO utilizes Silicon Laboratories’ advanced
DSPLL
®
circuitry to provide a low-jitter clock at high frequencies. The Si596
is available with any-rate output frequency from 10 to 810 MHz. Unlike
traditional VCXOs, where a different crystal is required for each output
frequency, the Si596 uses one fixed crystal to provide a wide range of output
frequencies. This IC-based approach allows the crystal resonator to provide
exceptional frequency stability and reliability. In addition, DSPLL clock
synthesis provides supply noise rejection, simplifying the task of generating
low-jitter clocks in noisy environments. The Si596 IC-based VCXO is
factory-configurable for a wide variety of user specifications including
frequency, supply voltage, output format, tuning slope, and absolute pull
range (APR). Specific configurations are factory programmed at time of
shipment, thereby eliminating the long lead times associated with custom
oscillators.
FS
GND
Functional Block Diagram
V
DD
CLK–
CLK+
Fixed
Frequency
XO
Any-rate
10–810 MHz
DSPLL
®
Clock Synthesis
ADC
Vc
FS
GND
Rev. 1.1 12/17
Copyright © 2017 by Silicon Laboratories
Si596
Si596
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Supply Voltage
1
Symbol
V
DD
Test Condition
3.3 V option
2.5 V option
1.8 V option
Supply Current
I
DD
LVPECL
CML
LVDS
CMOS
V
IH
V
IL
Operating Temperature Range
T
A
Min
2.97
2.25
1.71
—
—
—
—
0.75 x V
DD
—
–40
Typ
3.3
2.5
1.8
120
110
100
90
—
—
—
Max
3.63
2.75
1.89
135
120
110
100
—
0.5
85
mA
V
Units
Frequency Select (FS)
2
V
°C
Notes:
1.
Selectable parameter specified by part number. See 3. "Ordering Information" on page 8 for further details.
2.
FS pin includes an internal 17 k pullup resistor to V
DD
. When the FS is left floating, the pullup causes
FS = 1 = second frequency selected.
Table 2. V
C
Control Voltage Input
Parameter
Control Voltage Tuning Slope
1,2,3
Symbol
K
V
Test Condition
10 to 90% of V
DD
Min
—
Typ
45
95
125
185
380
±1
±5
10.0
—
50
V
DD
/2
Max
—
Units
ppm/V
Control Voltage Linearity
4
Modulation Bandwidth
V
C
Input Impedance
V
C
Input Capacitance
Nominal Control Voltage
Control Voltage Tuning Range
L
VC
BW
Z
VC
C
VC
V
CNOM
V
C
BSL
Incremental
–5
–10
9.3
500
—
+5
+10
10.7
—
—
—
V
DD
%
kHz
k
pF
V
V
@ f
O
—
0
Notes:
1.
Positive slope; selectable option by part number. See 3. "Ordering Information" on page 8.
2.
For best jitter and phase noise performance, always choose the smallest K
V
that meets the application’s minimum APR
requirements. See “AN266: VCXO Tuning Slope (K
V
), Stability, and Absolute Pull Range (APR)” for more information.
3.
K
V
variation is ±10% of typical values.
4.
BSL determined from deviation from best straight line fit with V
C
ranging from 10 to 90% of V
DD
. Incremental slope
determined with V
C
ranging from 10 to 90% of V
DD
.
2
Rev. 1.1
Si596
Table 3. CLK± Output Frequency Characteristics
Parameter
Nominal Frequency
1,2,3
Temperature Stability
1,4
Absolute Pull Range
1,4
Power up Time
5
Settling Time After FS Change
APR
t
OSC
T
FRQ
Symbol
f
O
Test Condition
LVDS/CML/LVPECL
CMOS
T
A
= –40 to +85 ºC
Min
10
10
–20
–50
±10
—
—
Typ
—
—
—
—
—
—
—
Max
810
160
+20
+50
±370
10
10
Units
MHz
ppm
ppm
ms
ms
Notes:
1.
See Section 3. "Ordering Information" on page 8 for further details.
2.
Specified at time of order by part number.
3.
Nominal output frequency set by V
CNOM
= V
DD
/2.
4.
Selectable parameter specified by part number.
5.
Time from power up or tristate mode to f
O
.
Table 4. CLK± Output Levels and Symmetry
Parameter
LVPECL Output Option
1
Symbol
V
O
V
OD
V
SE
Test Condition
mid-level
swing (diff)
swing (single-ended)
mid-level
swing (diff)
Min
V
DD
– 1.42
1.1
0.55
1.125
0.5
Typ
—
Max
V
DD
– 1.25
1.9
0.95
1.275
0.9
Units
V
V
PP
V
PP
V
V
PP
—
—
1.20
0.7
LVDS Output Option
2
V
O
V
OD
V
O
2.5/3.3 V option mid-level
1.8 V option mid-level
2.5/3.3 V option swing (diff)
1.8 V option swing (diff)
—
—
1.10
0.35
0.8 x V
DD
V
DD
– 1.30
V
DD
– 0.36
1.50
0.425
—
—
—
2
—
—
—
1.90
0.50
V
DD
V
V
PP
V
CML Output Option
2
V
OD
CMOS Output Option
3
Rise/Fall time (20/80%)
Symmetry (duty cycle)
V
OH
V
OL
t
R,
t
F
—
LVPECL/LVDS/CML
CMOS with C
L
= 15 pF
LVPECL:
LVDS:
CMOS:
V
DD
– 1.3 V (diff)
1.25 V (diff)
V
DD
/2
—
—
45
0.4
350
—
55
ps
ns
%
SYM
Notes:
1.
50
to V
DD
– 2.0 V.
2.
R
term
= 100
(differential).
3.
C
L
= 15 pF. Sinking or sourcing 12 mA for V
DD
=3.3 V, 6 mA for V
DD
=2.5 V, 3 mA for V
DD
= 1.8 V.
Rev. 1.1
3
Si596
Table 5. CLK± Output Phase Jitter
Parameter
Phase Jitter (RMS)
1,2
for F
OUT
of 50 MHz < F
OUT
810 MHz
Symbol
Test Condition
Kv = 45 ppm/V
12 kHz to 20 MHz
Kv = 95 ppm/V
12 kHz to 20 MHz
Kv = 125 ppm/V
12 kHz to 20 MHz
Kv = 185 ppm/V
12 kHz to 20 MHz
Kv = 380 ppm/V
12 kHz to 20 MHz
Min
—
—
—
—
—
Typ
0.5
0.5
0.5
0.5
0.7
Max
—
—
—
—
—
Units
ps
J
Notes:
1.
Refer to AN256 for further information.
2.
For best jitter and phase noise performance, always choose the smallest K
V
that meets the application’s minimum APR
requirements. See “AN266: VCXO Tuning Slope (K
V
), Stability, and Absolute Pull Range (APR)” for more information.
Table 6. CLK± Output Period Jitter
Parameter
Period Jitter*
Symbol
J
PER
Test Condition
RMS
Peak-to-Peak
Min
—
—
Typ
3
35
Max
—
—
Units
ps
*Note:
Any output mode, including CMOS, LVPECL, LVDS, CML. N = 1000 cycles. Refer to AN279 for further information.
Table 7. CLK± Output Phase Noise (Typical)
Offset Frequency
74.25 MHz
185 ppm/V
LVPECL
100 Hz
1 kHz
10 kHz
100 kHz
1 MHz
10 MHz
20 MHz
–77
–101
–121
–134
–149
–151
–150
148.5 MHz
185 ppm/V
LVPECL
–68
–95
–116
–128
–144
–147
–148
155.52 MHz
95 ppm/V
LVPECL
–77
–101
–119
–127
–144
–147
–148
Units
dBc/Hz
4
Rev. 1.1
Si596
Table 8. Environmental Compliance and Package Information
Parameter
Mechanical Shock
Mechanical Vibration
Solderability
Gross and Fine Leak
Resistance to Solder Heat
Contact Pads
Conditions/Test Method
MIL-STD-883, Method 2002
MIL-STD-883, Method 2007
MIL-STD-883, Method 2003
MIL-STD-883, Method 1014
MIL-STD-883, Method 2036
Gold over Nickel
Table 9. Thermal Characteristics
(Typical values TA = 25 ºC, V
DD
= 3.3 V)
Parameter
5x7mm, Thermal Resistance Junction to
Ambient
5x7mm, Thermal Resistance Junction to
Case
3.2x5mm, Thermal Resistance Junction to
Ambient
3.2x5mm, Thermal Resistance Junction to
Case
Ambient Temperature
Junction Temperature
Symbol
JA
JC
JA
JC
T
A
T
J
Test Condition
Still Air
Still Air
Still Air
Still Air
Min
—
—
—
—
–40
—
Typ
84.6
38.8
31.1
13.3
—
—
Max
—
—
—
—
85
125
Unit
°C/W
°C/W
°C/W
°C/W
°C
°C
Table 10. Absolute Maximum Ratings
1
Parameter
Maximum Operating Temperature
Supply Voltage
Input Voltage
Storage Temperature
ESD Sensitivity (HBM, per JESD22-A114)
Soldering Temperature (Pb-free profile)
2
Symbol
T
AMAX
V
DD
V
I
T
S
ESD
T
PEAK
Rating
85
–0.5 to +3.8
–0.5 to V
DD
+ 0.3
–55 to +125
2500
260
ºC
V
ºC
Units
ºC
V
Rev. 1.1
5
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