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CY7C1474V25-250BGI

Description
1M X 72 ZBT SRAM, 3 ns, PBGA209
Categorystorage   
File Size492KB,41 Pages
ManufacturerCypress Semiconductor
Download Datasheet Parametric View All

CY7C1474V25-250BGI Overview

1M X 72 ZBT SRAM, 3 ns, PBGA209

CY7C1474V25-250BGI Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals209
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum supply/operating voltage2.62 V
Minimum supply/operating voltage2.38 V
Rated supply voltage2.5 V
maximum access time3 ns
Processing package description14 × 22 MM, 1.76 MM HEIGHT, LEAD FREE, FPBGA-209
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
CraftsmanshipCMOS
packaging shapeRectangle
Package SizeGRID array
surface mountYes
Terminal formBALL
Terminal spacing1 mm
terminal coatingtin silver copper
Terminal locationBOTTOM
Packaging MaterialsPlastic/Epoxy
Temperature levelINDUSTRIAL
memory width72
organize1M × 72
storage density7.55E7 deg
operating modeSynchronize
Number of digits1.05E6 words
Number of digits1M
Memory IC typeZBT static random access memory
serial parallelparallel
CY7C1470V25
CY7C1472V25
CY7C1474V25
72-Mbit (2M × 36/4M × 18/1M × 72)
Pipelined SRAM with NoBL™ Architecture
72-Mbit (2M × 36/4M × 18/1M × 72) Pipelined SRAM with NoBL™ Architecture
Features
Functional Description
The CY7C1470V25/CY7C1472V25/CY7C1474V25 are 2.5 V,
2M × 36/4M × 18/1M × 72 synchronous pipelined burst SRAMs
with No Bus Latency™ (NoBL logic, respectively. They are
designed to support unlimited true back-to-back read/write
operations
with
no
wait
states.
The
CY7C1470V25/CY7C1472V25/CY7C1474V25 are equipped
with the advanced (NoBL) logic required to enable consecutive
read/write operations with data being transferred on every clock
cycle. This feature dramatically improves the throughput of data
in systems that require frequent write/read transitions. The
CY7C1470V25/CY7C1472V25/CY7C1474V25 are pin-compatible
and functionally equivalent to ZBT devices.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. All data outputs pass through output
registers controlled by the rising edge of the clock. The clock
input is qualified by the clock enable (CEN) signal, which when
deasserted suspends operation and extends the previous clock
cycle. Write operations are controlled by the Byte Write Selects
(BW
a
–BW
h
for CY7C1474V25, BW
a
–BW
d
for CY7C1470V25
and BW
a
–BW
b
for CY7C1472V25) and a write enable (WE)
input. All writes are conducted with on-chip synchronous
self-timed write circuitry.
Three synchronous chip enables (CE
1
, CE
2
, CE
3
) and an
asynchronous output enable (OE) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tri-stated during
the data portion of a write sequence.
For a complete list of related documentation, click
here.
Pin-compatible and functionally equivalent to ZBT™
Supports 200-MHz bus operations with zero wait states
Available speed grades are 200 and 167 MHz
Internally self-timed output buffer control to eliminate the need
to use asynchronous OE
Fully registered (inputs and outputs) for pipelined operation
Byte write capability
Single 2.5 V power supply
2.5 V I/O supply (V
DDQ
)
Fast clock-to-output times
3.0 ns (for 200-MHz device)
Clock enable (CEN) pin to suspend operation
Synchronous self-timed writes
CY7C1470V25 available in JEDEC-standard Pb-free 100-pin
TQFP, Pb-free and non Pb-free 165-ball FBGA package.
CY7C1472V25 available in JEDEC-standard Pb-free 100-pin
TQFP. CY7C1474V25 available in Pb-free and non Pb-free
209-ball FBGA package
IEEE 1149.1 JTAG boundary scan compatible
Burst capability – linear or interleaved burst order
“ZZ” sleep mode option and stop clock option
Selection Guide
Description
Maximum access time
Maximum operating current
Maximum CMOS standby current
200 MHz
3.0
450
120
167 MHz
3.4
400
120
Unit
ns
mA
mA
Errata:
For information on silicon errata, see
Errata on page 36.
Details include trigger conditions, devices affected, and proposed workaround
Cypress Semiconductor Corporation
Document Number: 38-05290 Rev. *V
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised January 4, 2018
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