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Datasheet> All Categories > Discrete semiconductor> The transistor> 2N6033
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2N6033

Description
Power Bipolar Transistor, 40A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size47KB，2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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2N6033 Overview

Power Bipolar Transistor, 40A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,

2N6033 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1689289599
Parts packaging codeTO-3
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)40 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)140 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz

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TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/528
Devices
2N6032
2N6033
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current
Emitter-Base Voltage
Base Current
Total Power Dissipation
Symbol
V
CEO
V
CBO
I
C
V
EBO
I
B
P
T
T
op
,
T
stg
2N6032
90
120
50
2N6033
120
150
40
Units
Vdc
Vdc
Adc
Vdc
Adc
W
0
@ T
C
= +25
0
C
(1)
7.0
10
140
-65 to +200
Max.
1.25
Operating & Storage Temperature Range
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
R
θ
JC
0
0
1) Derate linearly 800 mW/ C between T
C
= 25 C and T
C
= 200
0
C
0
Unit
C/W
TO-3*
(TO-204AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc, V
EB
= 1.5 Vdc
Collector-Base Cutoff Current
V
CB
= 120 Vdc
V
CB
= 150 Vdc
Collector-Emitter Cutoff Current
V
CE
= 110 Vdc, V
BE
=-1.5 Vdc
V
CE
= 135 Vdc, V
BE
=-1.5 Vdc
2N6032
2N6033
2N6032
2N6033
2N6032
2N6033
2N6032
2N6033
2N6032
2N6033
V
(BR)
CEO
90
120
110
140
120
150
25
25
12
10
Vdc
V
(BR)
CER
Vdc
V
(BR)
CEX
Vdc
I
CBO
mAdc
I
CEX
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2

2N6033 Related Products

2N6033 2N6032 JAN2N6032 JAN2N6033 JANTXV2N6033 JANTXV2N6032 JANTX2N6033 JANTX2N6032
Description Power Bipolar Transistor, 40A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, Power Bipolar Transistor, 50A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, Power Bipolar Transistor, 50A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, TO-3, 2 PIN Power Bipolar Transistor, 40A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, TO-3, 2 PIN Power Bipolar Transistor, 40A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN Power Bipolar Transistor, 50A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN Power Bipolar Transistor, 40A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN Power Bipolar Transistor, 50A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN
Objectid 1689289599 1689289591 2078541119 2078541122 1916728627 1916728624 1916728621 1916728618
Parts packaging code TO-3 TO-3 TO-204AA TO-204AA TO-3 TO-3 TO-3 TO-3
Contacts 2 2 2 2 2 2 2 2
Reach Compliance Code unknown unknown compliant compliant unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 40 A 50 A 50 A 40 A 40 A 50 A 40 A 50 A
Collector-emitter maximum voltage 120 V 90 V 90 V 120 V 120 V 90 V 120 V 90 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 10 10 10 10 10 10 10 10
JESD-30 code O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0
Number of components 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C
Package body material METAL METAL METAL METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Qualified Qualified Qualified Qualified Qualified Qualified
surface mount NO NO NO NO NO NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Is it lead-free? Contains lead Contains lead - - Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible - - incompatible incompatible incompatible incompatible
JEDEC-95 code TO-3 TO-3 - - TO-204AA TO-204AA TO-204AA TO-204AA
package instruction - - TO-3, 2 PIN TO-3, 2 PIN TO-3, 2 PIN TO-3, 2 PIN TO-3, 2 PIN TO-3, 2 PIN
Guideline - - MIL-19500/528A MIL-19500/528A MIL-19500/528A MIL-19500/528A MIL-19500/528A MIL-19500/528A

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