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BAS21S RF

Description
Diodes - General Purpose, Power, Switching Switching diode 225mW
Categorysemiconductor    Discrete semiconductor   
File Size209KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BAS21S RF Overview

Diodes - General Purpose, Power, Switching Switching diode 225mW

BAS21S RF Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerTaiwan Semiconductor
Product CategoryDiodes - General Purpose, Power, Switching
RoHSDetails
PackagingReel
Factory Pack Quantity3000
BAS21 / A / C / S
Taiwan Semiconductor
Small Signal Product
225mW SMD Switching Diode
FEATURES
- Fast switching speed
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
SOT-23
MECHANICAL DATA
- Case: SOT-23 small outline plastic package
- Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Weight: 8 ± 0.5 mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Power Dissipation
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
Non-Repetitive Peak Forward Surge Current
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
2. Valid provided that electrodes are kept at ambient temperature
PARAMETER
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
I
R
= 100
μA
I
F
= 100 mA
I
F
= 200 mA
V
R
= 200 V
V
R
= 1 V , f = 1.0 MHz
I
F
= I
R
= 30mA , R
L
= 100Ω , I
RR
= 1mA
SYMBOL
V
R(BR)
V
F
I
R
C
J
trr
MIN
250
-
-
-
-
-
MAX
-
1.00
1.25
0.1
5
50
UNIT
V
V
μA
pF
ns
(Note 1)
(Note 2)
SYMBOL
P
D
V
RRM
I
FRM
I
O
I
FSM
R
θJA
T
J
, T
STG
VALUE
225
250
625
200
1
500
-55 to +150
o
UNIT
mW
V
mA
mA
A
C/W
o
C
Notes : 1. Test condition : 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) pulse width = 1
μsec
Document Number: DS_S1412039
Version: D14
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