Datasheet
1ch Low Side Switch IC
In-Vehicle 1ch Low Side Switch
BD1LB500 Series
Features
■
■
■
■
■
■
■
■
■
■
■
■
Built-in overcurrent limiting circuit
Built-in thermal shutdown circuit (TSD)
Built-in open load detection circuit (at output OFF)
Enables direct control from CMOS logic ICs, etc.
Low standby current
Built-in under voltage lock out circuit
Built-in diagnostic output (ST) terminal
Low ON resistance R
DS(ON)
=350mΩ(Typ) (V
DD
=IN=5V,
Ta=25°C, I
OUT
=0.25A)
Built-in overvoltage protection(active clamp) for output
circuit
Monolithic power IC in which the control unit (CMOS)
and power MOS FET are incorporated into one chip
1ch low side switch for driving mechanical relay coil
AEC-Q100 Qualified
(1)
(1) Grade1
(BD1LB500EFJ-C BD1LB500FVM-C)
Specifications
Operating voltage range
ON resistance (25°C, Typ.)
Overcurrent limitation (Typ.)
Active clamp energy (25°C)
3.5V to 5.5V
350mΩ
1.50A
25mJ
Package
HTSOP-J8
MSOP8
4.90mm x 6.00mm x 1.00mm
2.90mm x 4.00mm x 0.90mm
Overview
BD1LB500 Series is an in-vehicle 1ch low side switch.
This switch builds in the overcurrent limiting circuit,
thermal shutdown circuit, open load detection circuit and
under voltage lock out circuit. It also provides the
diagnostic output circuit when an abnormality is
detected.
Application
■
In-vehicle application (Air conditioners, body devices,
meters, etc.)
HTSOP-J8
MSOP8
Basic Application Circuit (Recommendation)
V
DD
VBAT
R
L
8
VDD
7
N.C.
Under voltage
lock out
Open load
detection
6
DRAIN
5
DRAIN
Overvoltage
protection
Logic
0.1µF
Rext
(2)
Over current
Limit
IN
ST
SOURCE (GND)
SOURCE
(GND)
1
2
10k
(3)
3
4
(2) When the open detection function is required, an external resistance must be added between DRAIN terminal and SOURCE terminal.
(3) It is necessary to detect unusual state(ST terminal is low) when VDD terminal is opened.
When ST pin is not used, it can be open.
Product
configuration: Silicon monolithic integrated circuit
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product is not designed for radiation resistance.
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TSZ02201-0G3G0BD00040-1-2
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BD1LB500 Series
Pin Descriptions
Pin No.
1
2
3,4
5,6
7
8
Cooling Tab
(1)
Symbol
IN
ST
SOURCE
(GND)
DRAIN
N.C.
VDD
TAB
Function
Input terminal; a pull down resistor is connected internally.
Datasheet
Self-diagnostic output terminal; outputs “L” at detection of overcurrent, at open (IN=0V),
and in the overheat state. See the truth table. It is structured as COMS inverter output
circuit.
Ground terminal
Output terminal; limits output current to protect IC when load is short-circuited and current
exceeding the overcurrent detection value (0.8A Min) flows to the output terminal.
No Connect pin
Power supply terminal
The heat radiation metal on the substrate is connected to the IC sub. Therefore, connect
Cooling Tab to the external GND electrical potential (for HTSOP-J8 only).
(1)MSOP8 does not have Cooling Tab.
Pin Configurations
Product Name
BD1LB500EFJ-C
BD1LB500FVM-C
PKG
HTSOP-J8
TSD function
ON resistance
(25°C,Typ)
350mΩ
Self-restart
MSOP8
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TSZ02201-0G3G0BD00040-1-2
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BD1LB500 Series
Absolute Maximum Ratings
Item
DRAIN-SOURCE voltage
Power supply voltage
Diagnostic output voltage
Output current (DC)
Output current (Pulse)
Input voltage
Power consumption
Operating temperature range
Storage temperature range
Maximum junction temperature
Active clamp energy (single pulse)
Symbol
V
DS
V
DD
V
ST
I
OD
I
OP
V
IN
Pd
T
opr
T
stg
T
jmax
E
AS(25°C)
E
AS(150°C)
Limit values
42 (internally limited)
7
-0.3 to +7
0.8
(2)
(1)
Datasheet
Unit
V
V
V
A
A
V
W
°C
°C
°C
mJ
mJ
Internally limited
(3)
-0.3 to +7
(1)
2.1(HTSOP-J8)
(4)
0.587(MSOP8)
(5)
-40≤T
opr
<+150
-55 to +150
150
25
(6)
25
(7)(8)
Operating Voltage Ratings
Item
Operating voltage range
Code
V
DD
Limit values
3.5 to 5.5
Unit
V
(1) The condition, V
D D
>V
IN
, V
S T
is required.
(2) The value must not exceed Pd.
(3) Internally limited by the overcurrent limiting circuit.
(4) When mounting PCB (70×70[mm], thickness 1.6[mm], copper foil area 70×70[mm], glass epoxy 2-layer substrate).
When using at Ta
≥
25°C, power dissipation is reduced at 16.8mW/°C.
(5) When mounting PCB (70×70[mm], thickness 1.6[mm], copper foil area is Footprint only, glass epoxy single-layer substrate).
When using at Ta
≥
25°C, power dissipation is reduced at 4.7mW/°C.
(6) Active clamp energy at T
j(0)
= 25°C, using single non-repetitive pulse of 0.4A
(7) Active clamp energy at T
j(0)
= 150°C, using single non-repetitive pulse of 0.4A
(8) Not 100% tested.
Heat Dissipation Characteristics
4.00
3.50
3.00
2.50
Pd [W]
2.1 W
HTSOP-J8
(1)
3.75 W
2.00
1.50
1.00
0.587 W
HTSOP-J8
(2)
MSOP8
(3)
0.50
0.00
0
25
50
75
Ta [℃]
100
125
150
(HTSOP-J8)
(MSOP8)
(1) When mounting PCB (70×70[mm], thickness 1.6[mm], copper foil area 70×70[mm], glass epoxy 4-layer substrate)
When using at Ta
≥
25°C, power dissipation is reduced at 30mW/°C.
(2) When mounting PCB (70×70[mm], thickness 1.6[mm], copper foil area 70×70[mm], glass epoxy 2-layer substrate)
When using at Ta
≥
25°C, power dissipation is reduced at 16.8mW/°C.
(3) When mounting PCB (70×70[mm], thickness 1.6[mm], copper foil area is Footprint only, glass epoxy single-layer
substrate)
When using at Ta
≥
25°C, power dissipation is reduced at 4.7mW/°C.
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TSZ22111・15・001
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TSZ02201-0G3G0BD00040-1-2
26.May.2017 Rev.008
BD1LB500 Series
Electrical Characteristics (V
DD
=3.5V to 5.5V, -40°C≤ T
j
≤ +150°C
unless otherwise is specified)
Item
[Power Supply Block]
Standby current
Operating current
Under voltage
threshold voltage
[Input Block]
H level input voltage
L level input voltage
Input hysteresis
High level input current
Low level input current
[Power MOS output]
R
DS(ON)
Output ON resistance
R
DS(ON)
I
L(OFF)
Output leak current
I
L(OFF)
t
ON
Switching time
t
OFF
Slew rate (at ON)
Slew rate (at OFF)
Output clamp voltage
[Diagnostic output]
Diagnostic output voltage
“L level”
Diagnostic output voltage
“H level”
Diagnostic output current
“H level”
V
STL
V
STH
I
STH
-
4.88
-
-
-
-
0.4
-
10
V
V
μA
dV/dt
ON
-dV/dt
OFF
V
CL
-
0.5
0.5
42
20
1
1
47
40
2
2
52
μs
V/μs
V/μs
V
-
-
-
20
100
40
μA
μs
-
-
570
-
750
10
mΩ
μA
-
350
450
mΩ
V
TH1
V
TH2
V
HYS
I
INH1
I
INL
-
V
DD
×0.2
Datasheet
Symbol
Limit values
Min
Typ
Max
Unit
Condition
I
DDS
I
DD
lock
out
V
UVLO
-
-
-
0
0.5
2.5
10
1.0
3.0
μA
mA
V
V
DD
=5V,V
IN
=0V,V
B
=12V,R
L
=47Ω
V
DD
=5V,V
IN
=5V,V
B
=12V,R
L
=47Ω
-
-
0.40
50
0
V
DD
×0.8
V
V
V
μA
μA
V
IN
=5V
V
IN
=0V
-
-
100
1
-
-
-1
V
IN
=5V,
V
DD
=5V,I
D
=0.25A,Tj=25°C
V
IN
=5V,
V
DD
=5V,I
D
=0.25A,Tj=150°C
V
IN
=0V,V
DS
=12V,Tj=25°C
V
IN
=0V,V
DS
=12V,Tj=150°C
V
DD
=5V,V
IN
=0V/5V, R
L
=47Ω
V
DD
=5V,V
IN
=0V/5V, R
L
=47Ω
V
DD
=5V,V
IN
=0V/5V, R
L
=47Ω
V
DD
=5V,V
IN
=0V/5V, R
L
=47Ω
V
IN
=0V,I
OUT
=-1mA
V
DD
=5V,V
IN
=5V,I
ST
=0.1mA
V
DD
=5V,V
IN
=0V,I
ST
=-0.1mA
V
IN
=0V,V
ST
=5.5V
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TSZ22111・15・001
4/16
TSZ02201-0G3G0BD00040-1-2
26.May.2017 Rev.008
BD1LB500 Series
Electrical Characteristics (V
DD
=3.5V to 5.5V, -40°C≤ T
j
≤ +150°C
unless otherwise is specified)
Item
[Protective circuit]
Overcurrent detection current
I
OCP
t
DHL
Diagnostic output delay time
t
DLH
Open load detection threshold
voltage
(1)
Open load detection time
V
OPEN
t
OPEN
-
1
100
320
2
300
640
3
900
μs
V
μs
V
DD
=5V,R
L
=∞ to 4Ω
IN=0V
IN=0V
0.8
-
1.5
40
2.5
80
A
μs
V
IN
=5V
V
DD
=5V,R
L
=4Ω to
∞
Symbol
Rated value
Min
Typ
Max
Unit
Datasheet
Condition
(1) To enable detection, an external resistance must be added between DRAIN terminal and SOURCE terminal.
(Determine
Rext depending on R
L
.)
Definition
Figure 1. Definition
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© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
5/16
TSZ02201-0G3G0BD00040-1-2
26.May.2017 Rev.008