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BCY78-VIII

Description
Bipolar Transistors - BJT PNP 32Vcbo 5.0Vebo 100mA 340mW 1W
CategoryDiscrete semiconductor    The transistor   
File Size610KB,3 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

BCY78-VIII Overview

Bipolar Transistors - BJT PNP 32Vcbo 5.0Vebo 100mA 340mW 1W

BCY78-VIII Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)45
JEDEC-95 codeTO-18
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.6 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Maximum off time (toff)400 ns
Maximum opening time (tons)100 ns
BCY78, VII, VIII, IX, X
BCY79, VII, VIII, IX, X
SILICON
PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCY78 and BCY79
series types are silicon PNP epitaxial planar transistors,
mounted in a hermetically sealed metal case, designed
for low noise amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICBO
IEBO
BVCBO
BVCBO
BVCEO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(ON)
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
PD
PD
TJ, Tstg
JA
JC
BCY78
32
32
BCY79
45
45
UNITS
V
V
V
mA
mA
mA
mW
W
°C
°C/W
°C/W
5.0
100
200
200
340
1.0
-65 to +200
450
150
CHARACTERISTICS:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VCB=Rated VCBO
VCB=Rated VCBO, TA=150°C
VEB=5.0V
IC=10μA (BCY78)
32
IC=10μA (BCY79)
45
IC=2.0mA (BCY78)
32
IC=2.0mA (BCY79)
45
IE=1.0μA
5.0
IC=10mA, IB=250μA
IC=100mA, IB=2.5mA
IC=10mA, IB=250μA
0.60
IC=100mA, IB=2.5mA
0.70
VCE=5.0V, IC=2.0mA
0.60
BCY78-VII
BCY79-VII
MIN TYP MAX
- 140
-
120 -
220
80
-
-
40
-
-
MAX
15
10
20
0.25
0.80
0.85
1.20
0.75
BCY78-IX
BCY79-IX
MIN MAX
40
-
250 460
160 630
60
-
UNITS
nA
μA
nA
V
V
V
V
V
V
V
V
V
V
BCY78-X
BCY79-X
MIN MAX
100
-
380 630
240 1000
60
-
hFE
hFE
hFE
hFE
VCE=5.0V,
VCE=5.0V,
VCE=1.0V,
VCE=1.0V,
IC=10μA
IC=2.0mA
IC=10mA
IC=100mA
BCY78-VIII
BCY79-VIII
MIN MAX
30
-
180 310
120 400
45
-
R4 (4-June 2013)

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