BCY78, VII, VIII, IX, X
BCY79, VII, VIII, IX, X
SILICON
PNP TRANSISTORS
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCY78 and BCY79
series types are silicon PNP epitaxial planar transistors,
mounted in a hermetically sealed metal case, designed
for low noise amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICBO
IEBO
BVCBO
BVCBO
BVCEO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(ON)
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
PD
PD
TJ, Tstg
JA
JC
BCY78
32
32
BCY79
45
45
UNITS
V
V
V
mA
mA
mA
mW
W
°C
°C/W
°C/W
5.0
100
200
200
340
1.0
-65 to +200
450
150
CHARACTERISTICS:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VCB=Rated VCBO
VCB=Rated VCBO, TA=150°C
VEB=5.0V
IC=10μA (BCY78)
32
IC=10μA (BCY79)
45
IC=2.0mA (BCY78)
32
IC=2.0mA (BCY79)
45
IE=1.0μA
5.0
IC=10mA, IB=250μA
IC=100mA, IB=2.5mA
IC=10mA, IB=250μA
0.60
IC=100mA, IB=2.5mA
0.70
VCE=5.0V, IC=2.0mA
0.60
BCY78-VII
BCY79-VII
MIN TYP MAX
- 140
-
120 -
220
80
-
-
40
-
-
MAX
15
10
20
0.25
0.80
0.85
1.20
0.75
BCY78-IX
BCY79-IX
MIN MAX
40
-
250 460
160 630
60
-
UNITS
nA
μA
nA
V
V
V
V
V
V
V
V
V
V
BCY78-X
BCY79-X
MIN MAX
100
-
380 630
240 1000
60
-
hFE
hFE
hFE
hFE
VCE=5.0V,
VCE=5.0V,
VCE=1.0V,
VCE=1.0V,
IC=10μA
IC=2.0mA
IC=10mA
IC=100mA
BCY78-VIII
BCY79-VIII
MIN MAX
30
-
180 310
120 400
45
-
R4 (4-June 2013)
BCY78, VII, VIII, IX, X
BCY79, VII, VIII, IX, X
SILICON
PNP TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
fT
VCE=5.0V, IC=10mA, f=100MHz
100
Cob
VCB=10V, IE=0, f=1.0MHz
Cib
VEB=0.5V, IC=0, f=1.0MHz
NF
VCE=5.0V, IC=0.2mA, Rs=2.0kΩ, f=1.0kHz, B=200Hz
ton
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
td
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
tr
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
toff
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
ts
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
tf
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
ton
VCC=10V, IC=100mA, IB1=IB2=10mA
td
VCC=10V, IC=100mA, IB1=IB2=10mA
tr
VCC=10V, IC=100mA, IB1=IB2=10mA
toff
VCC=10V, IC=100mA, IB1=IB2=10mA
ts
VCC=10V, IC=100mA, IB1=IB2=10mA
tf
VCC=10V, IC=100mA, IB1=IB2=10mA
MAX
7.0
15
10
100
50
50
700
600
100
100
35
65
400
300
100
UNITS
MHz
pF
pF
dB
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
TO-18 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
R4 (4-June 2013)
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PRODUCT SUPPORT
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nd
day air)
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REQUESTING PRODUCT PLATING
1.
2.
If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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