BAV19/BAV20/BAV21
Taiwan Semiconductor
200mA,120-250V Switching Diode
FEATURES
●
●
●
●
Low power loss, high efficiency
Ideal for automated placement
High surge current capability
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
at PW = 1μs
V
F
at I
F
=100mA
VALUE
100-200
120-250
4
1.00
175
DO-35
Single Die
UNIT
mA
V
A
V
°C
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
Lighting application
On-board DC/DC converter
T
J MAX
Package
Configuration
MECHANICAL DATA
● Case: DO-35
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Polarity: Indicated by cathode band
● Weight: 109 ± 4 mg (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Reverse Breakdown Voltage
Peak Forward Surge Current
Junction temperature range
Storage temperature range
IR = 100 μA
Pulse Width = 1 s , Square
Wave
Pulse Width = 1 μs , Square
Wave
SYMBOL
V
(BR)
I
FSM
4
T
J
T
STG
-55 ~ 175
-55 ~ 175
°C
°C
PART NUMBER
BAV19 BAV20 BAV21
UNIT
V
A
120
200
1
250
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJA
LIMIT
300
UNIT
°C/W
1
Version:E1610
BAV19/BAV20/BAV21
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage per diode
(1)
CONDITIONS
I
F
= 100mA, T
J
= 25°C
I
F
= 200mA, T
J
= 25°C
BAV19
VR = 100 V
VR = 150 V
VR = 200 V
BAV20
BAV21
SYMBOL
V
F
TYP
--
--
MAX
1.00
1.25
UNIT
V
V
Reverse current @ rated V
R
per diode
(2)
I
R
C
J
--
100
nA
ρF
Junction capacitance
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
1 MHz, V
R
=0V
--
5
ORDERING INFORMATION
PART NO.
BAVXX
(Note 1&2)
PACKING
CODE
R0
G
A0
DO-35
5K / Box (Ammo)
PACKING CODE
SUFFIX
PACKAGE
PACKING
10K / 14" Reel
Notes:
1.
"xx" is Device Code from "19" to "21"
2.
Whole series with green compound
EXAMPLE
EXAMPLE P/N
BAV19 R0G
PART NO.
BAV19
PACKING CODE
R0
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
2
Version:E1610
BAV19/BAV20/BAV21
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Reverse Voltage VS. Reverse Current
325
50
40
30
20
10
275
1
10
Reverse Current (uA)
100
0
10
100
Reverse Voltage (V)
1000
T
A
=25
o
C
Reverse Current VS. Reverse Voltage
Reverse Voltage (V)
300
Reverse Current VS. Reverse Voltage
100
90
80
Reverse Current (nA)
70
60
50
40
30
20
100
Reverse Voltage (V)
1000
225
1
T
A
=25
o
C
Forward Voltage (mV)
425
475
Reverse Current (nA)
T
A
=25
o
C
Forward Voltage VS. Forward Current
T
A
=25
o
C
375
325
275
10
Forward Current (uA)
100
3
Version:E1610
BAV19/BAV20/BAV21
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Forward Volatage VS. Forward Current
1.4
700
Forward Voltage (mV)
650
600
550
500
450
0.1
1
Forward Current (mA)
10
T
A
=25
o
C
Forward Voltage (V)
1.3
1.2
1.1
1
0.9
0.8
0.7
10
100
Forward Current (mA)
1000
T
A
=25
o
C
Forward Volatage VS. Forward Current
4
Version:E1610
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