M54/74HCT563
M54/74HCT573
OCTAL D-TYPE LATCH WITH 3 STATE OUTPUT
HCT563 INVERTING - HCT573 NON INVERTING
.
.
.
.
.
.
.
HIGH SPEED
t
PD
= 18 ns (TYP.) AT V
CC
= 5 V
LOW POWER DISSIPATION
I
CC
= 4
µA
(MAX.) AT T
A
= 25
°C
COMPATIBLE WITH TTL OUTPUTS
V
IH
= 2V (MIN.) V
IL
= 0.8V (MAX.)
OUTPUT DRIVE CAPABILITY
15 LSTTL LOADS
SYMMETRICAL OUTPUT IMPEDANCE
I
OL
=
I
OH
=
6 mA (MIN.)
BALANCED PROPAGATION DELAYS
t
PLH
= t
PHL
PIN AND FUNCTION COMPATIBLE
WITH 54/74LS563/573
B1R
(Plastic Package)
F1R
(Ceramic Package)
M1R
(Micro Package)
C1R
(Chip Carrier)
DESCRIPTION
The M54/74HCT563 and M54HCT573 are high
speed CMOS OCTAL LATCH WITH 3-STATE
OUTPUTS fabricated with silicon gate C
2
MOS
technology.
These ICs achive the high speed operation similar
to equivalent LSTTL while maintaining the CMOS
low power dissipation.
These 8 bit D-Type latches are controlled by a latch
enable input (LE) and a output enable input (OE).
While the LE input is held at a high level, the Q
outputs will follow the data input precisely or
inversely. When the LE is taken low, the Q outputs
will be latched precisely or inversely at the logic level
of D input data. While the OE input is at low level,
PIN CONNECTION
(top view)
HCT563
HCT573
ORDER CODES :
M54HCTXXXF1R
M74HCTXXXM1R
M74HCTXXXB1R
M74HCTXXXC1R
the eight outputs will be in a normal logic state (high
or low logic level) and while high level the outpts will
be in a high impedance state.
The application designer has a choise of
combination of inverting and non inverting outputs.
This integrated circuit has input and output
characteristics that are fully compatible with 54/74
LSTTL logic families. M54/74HCT devices are
designed to directly interface HSC
2
MOS systems
with TTL and NMOS components. They are also
plug in replacements for LSTTL devices giving a
reduction of power consumption.
All inputs are equipped with protection circuits
against discharge and transient excess voltage.
HCT563
HCT573
October 1993
1/13
M54/M74HCT563/573
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
I
CC
or I
GND
P
D
T
stg
T
L
Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Source Sink Current Per Output Pin
DC V
CC
or Ground Current
Power Dissipation
Storage Temperature
Lead Temperature (10 sec)
Parameter
Value
-0.5 to +7
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
±
20
±
20
±
35
±
70
500 (*)
-65 to +150
300
Unit
V
V
V
mA
mA
mA
mA
mW
o
o
C
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnotimplied.
(*) 500 mW:
≅
65
o
C derate to 300 mW by 10mW/
o
C: 65
o
C to 85
o
C
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
O
T
op
t
r
, t
f
Parameter
Supply Voltage
Input Voltage
Output Voltage
Operating Temperature:
M54HC
Series
M74HC
Series
Input Rise and Fall Time (V
CC
= 4.5 to 5.5V)
Value
4.5 to 5.5
0 to V
CC
0 to V
CC
-55 to +125
-40 to +85
0 to 500
Unit
V
V
V
C
o
C
ns
o
4/13
stm32/stm8
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