Thyristors (SiBOD
™
Breakover Devices)
SiBOD
™
Series
Specify Crydom
… for these industry-leading
components and products:
Get TVS Insurance From
The People Who Know
There’s too much riding on over-voltage
surge protection to take chances. That’s
why more and more people are turning
to Crydom.
Why?
To start with, we don’t just sell TVS compo-
nents – we’re the only company develop-
ing, designing and manufacturing all five
of the basic product families: Transient
Voltage Suppression (TVS) Diodes. SiBOD
™
Thyristor Suppression Devices. Gas Discharge
Tubes (GDT). Hybrid Arrester Over-Voltage
Surge Protectors. Zeners/Studs. And the
only company employing all three voltage
protection technologies – gas tube, semi-
conductor and hybrid.
That means we're the only one who knows
them inside and out. What each type can
and can't do. Which type to use for differ-
ent applications. How to provide as much
or little technical support as you need.
How to work with you to develop special
devices should you require them. And
even assist you in formulating design
requirements and testing procedures to
meet both your specifications and inter-
national standards.
Crydom’s SiBOD Series Equals
“Crow Bar” Protection
To protect sensitive telecommunications
circuitry, Crydom Thyristors (SiBOD™
Breakover Devices) “crow bar” potential-
ly dangerous transients – switching them
to ground and dissipating the voltage to
zero. This approach can handle more
energy than TVS diode “clamping.”
FEATURES
• Glass passivated junction
• Bi-directional transient voltage
protection
• Nano second clamping response
• Surge capability up to 500 amps
• No performance degradation under
service life
BENEFITS
• One component cost for +ve
and -ve protection
• Excellent voltage protection levels
• Can be used for primary or secondary
protection
• No replacement required ie,
no maintenance cost
• Highest level of quality and reliability
• Low cost auto assembly
MECHANICAL CHARACTERISTICS
• Transfer molded, void free epoxy body
• Tin/Lead plated leads
• Maximum case temperature for solder-
ing purposes: 230°C for 10 seconds
• Solid State Relays
Printed Circuit Board Mount
Panel Mount
DIN Rail Mount
• Power Cubes
• I/O Modules
• Transient Voltage
Suppression Components
TVS Diodes
Thyristor Suppression
Devices
Gas Discharge Tubes (GDT)
Zeners/Studs
Hybrid Arrester Devices
To Order: 1-877-502-5500 Fax: 1-858-715-7280
Thyristors (SiBOD
™
Breakover Devices)
SiBOD
Series
Application Notes
The Added Crydom Benefit
Crydom Thyristors (SiBOD
™
Breakover
Devices) offer the highest quality and
performance. They also come with an
added benefit – service and technical
assistance to help ensure optimum pro-
tection for your telecommunications
application.
SiBOD Series
The Crydom SiBOD is a four-layer thyristor-
based protector designed specifically for
telecommunications applications. It has
greater capacity for diverting surge cur-
rents than an avalanche TVS device.
The Crydom series protector is based on
the proven technology of the SiBOD prod-
uct. Designed for transient voltage protec-
tion of telecommunications equipment, it
provides higher power handling than a
conventional avalanche diode (TVS), and
when compared to a GDT offers lower volt-
age clamping levels and infinite surge life.
Electrical Characteristics
The electrical characteristics of the
SiBOD devices are similar to those of a
self-gated Triac, but the SiBOD are two-
terminal devices with no gate. The gate
function is achieved by an internal current
controlled mechanism.
Like the TVS diodes, the SiBOD have a
stand-off voltage (V
RM
) that should be equal
to or greater than the operating voltage of
the system to be protected. At this voltage
(V
RM
) the current consumption of the SiBOD
are negligible and will not effect the pro-
tected system.
When a transient occurs, the voltage across
the SiBOD will increase until the breakdown
voltage (V
BR
) is reached. At this point the
device will operate in a similar way to a
TVS device and is in an avalanche mode.
The voltage of the transient will now be
limited and will only increase by a few
volts as the device diverts more current.
As this transient current rises, a level of
current through the device is reached
(I
BO
), causing the device to switch to a
fully conductive state such that the volt-
age across the device is now only a few
volts (V
T
). The voltage at which the device
switches from the avalanche mode to the
fully conductive state (V
T
) is known as the
breakover voltage (V
BO
). When the device
is in the V
T
state, high currents can be
diverted without damage to the SiBOD
due to the low voltage across the device,
since the limiting factor in such devices is
dissipated power (V X I).
Resetting of the device to the nonconduct-
ing state is controlled by the current flowing
through the device. When the current falls
below a certain value, known as the holding
current (I
H
), the device resets automatically.
As with the avalanche TVS device, if the
SiBOD device is subjected to a surge
current that is beyond its maximum rating,
the device will fail in short-circuit mode,
which ensures that the equipment is
ultimately protected.
PABX PROTECTION
CR1300SB
CR1300SB
DC SUPPLY
IH >
R
Equipment
to be
protected
VC
R
VC
SLIC PROTECTION
Line
CR0640SB
To SLIC
CR0640SB
Line
or
(-)
Line
(-)
CR0640SB
(+) To SLIC
Line
(-)
COMPLETE PC BOARD
OPERATION PROTECTION
Line
CR2300
SB
On-hook
Off-hook
Ring
relay
On-hook
Line
Primary Off-hook
protection
Ring
Generator
on-hook
or
CR0640 (-)
SB
(-)
(-)
Secondary
protection
off-hook
Integrated
SLIC
(+)
Ring
Detection
-VBattery
Circuit
2
To Order: 1-877-502-5500 Fax: 1-858-715-7280
Thyristors (SiBOD
™
Breakover Devices)
SiBOD
Series
Application Notes
Selecting a SiBOD Device
1. When selecting a device, it is important
that the V
RM
of the device be equal to or
greater than the operating voltage of the
system. For example, when protecting
the ringing circuit of a telephone handset,
SiBOD V
RM
> V
DC
+ RINGING VOLTAGE
SiBOD V
RM
> V
DC
+ V√ 2X RINGING VOLTAGE
2. The minimum holding current (I
H
) of the
device must be carefully selected if the
SiBOD is to reset after diverting a surge.
The minimum I
H
value of the SiBOD must
be greater than the current the system is
capable of delivering, otherwise the
device will remain conducting following
a transient condition.
I
H
> SYSTEM VOLTAGE
SOURCE IMPEDANCE
The SiBOD range can be used to protect against surges
as defined in the following International Standards
Standard
V
OLTAGE
V
OLTS
W
AVEFORM
µ
SEC
C
URRENT
AMPS
W
AVEFORM
µ
SEC
S
I
BOD
S
ERIES
FCC Part 68
Surge A Metallic
Surge A Longitudinal
Surge B Metallic
Surge B Longitudinal
Bellcore GR 1089
1
2
3
4
5
ITU K.17
ITU K.20
ITU K.21
RLM 88, CNET
CNET 131-24
VDE 0433
VDE 0878
IEC 61000-4-5
FTZ R12
800
1500
1000
1500
600
1000
1000
2500
1000
1500
1000
1500
4000
1500
1000
2000
2000
Level 3
Level 4
2000
10x560
10x160
9x720
9x720
10x1000
10x360
10x1000
2x10
10x360
10x700
10x700
10x700
10x700
.5x700
.5x700
10x700
1.2x50
10x700
1.2x50
10x700
100
200
25
37.5
100
100
100
500
25
37.5
25/100
37.5
100
38
25
50
50
50
100
50
10x560
10x160
5x320
5x320
10x1000
10x360
10x1000
2x10
10x360
5x310
5x310
5x310
5x310
.2x310
.8x310
5x310
1x20
5x310
8x20
5x310
B or C
C
A, B or C
A, B or C
C
B or C
C
C
A, B or C
A, B or C
A, B or C
A, B or C
B or C
A, B or C
A, B or C
A, B or C
A, B or C
A, B or C
A, B or C
A, B or C
To Order: 1-877-502-5500 Fax: 1-858-715-7280
3
Thyristors (SiBOD
™
Breakover Devices)
SiBOD
Series
V-I Graph Illustrating Symbols and Terms
for the SiBOD Surge Protection Devices
I
T
I
H
I
BO
I
RM
V
T
V
RM
V
BR
V
BO
MIN.
tr
100
ELECTRICAL CHARACTERISTICS
(Tj = 25°C)
SYMBOL
PARAMETER
Percentage Peak Voltage
90
t2
V
RSM
tr=1.67 x (t2-t1)=1.2µs
V
RM
V
BR
V
BO
/V
S
V
T
I
RM
I
BO
I
H
Co
Ipp
Stand-off voltage
Breakdown voltage
Breakover voltage
On-state voltage
Stand-off current
Breakover current
Holding current
Off state Capacitance
Peak pulse current
100
Percentage Peak Current
90
tr
1RSM
or
t2 1
SM
tr = 1.25 x (t 2 -t 1 ) = 8
µs
1RSM
50
td=
20
µs
10
20
30
40
Time (µs)
50
50
30
t1
td = 50
µs
10
20
30
V
RSM
40 50 60
Time (µs)
70
10
t1
ABSOLUTE RATINGS
SYMBOL
PARAMETER
DO-214
VALUE
TO-220
T10
UNIT
T stg
Tj
T
L
T
C
Storage and operating junction
temperature range
Maximum temperature for soldering
(For period of 10 seconds max.)
Maximum case temperature
-40 to 150 -40 to 150 -40 to 150
150
230
75
150
230
115
150
230
75
C˚
C˚
C˚
C˚
4
To Order: 1-877-502-5500 Fax: 1-858-715-7280
DSP and ARM Processors
京公网安备 11010802033920号
EEWORLD
