PFM21030 datasheet, PDF - EEWORLD Datasheet

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PFM21030: Description2110-2170 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs; File Size417KB，13 Pages; ManufacturerETC

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2110-2170 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs

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PRELIMINARY

PFM21030

SPECIFICATION

2110-2170 MHz, 30W, 2-Stage Power Module

Enhancement-Mode Lateral MOSFETs

This versatile UMTS module provides excellent linearity and efficiency in

Package Type: Surface Mount

a low-cost surface mount package. The PFM21030 includes two stages

PN: PFM21030SM

of amplification, along with internal sense FETs that are on the same

silicon die as the RF devices. These thermally coupled sense FETs

simplify the task of bias temperature compensation of the overall amplifier.

The module includes RF input, interstage, and output matching elements.

The source and load impedances required for optimum operation of the

module are much higher (and simpler to realize) than for unmatched Si

LDMOS transistors of similar performance.

The surface mount package base is typically soldered to a conventional

PCB pad with an array of via holes for grounding and thermal sinking

of the module. Optimized internal construction supports low FET

channel temperature for reliable operation.

Package Type: Flange

PN: PFM21030F

•

27 dB Gain

•

30 Watts Peak Output Power

•

Internal Tracking FETs

(for improved bias control)

•

WCDMA Performance

5 Watts Average Output Level

18% Power Added Efficiency

–45 dBc ACPR

Module Schematic Diagram

Module Substrate

Q1 Die Carrier

Gate 1

RF IN

Lead

Input

Match

Output

Match

Input

Match

Q2 Die Carrier

Output

Match

Drain 2

RF OUT

Lead

Sense S1

Gate 2

Sense S2

Lead

Note: Additionally, there are 250K Ohm resistors connected in shunt with all leads, to enhance ESD protection.

Page 1 of 13

Specifications subject to change without notice. US Patent No.6,822,321

http://www.cree.com/

Rev. 3

PFM21030 Related Products

	PFM21030	PFM21030F	PFM21030SM
Description	2110-2170 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs	2110-2170 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs	2110-2170 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs

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