PIN Photodiodes
PNZ313
(PN313)
Silicon planar type
For optical control systems
7.0
±0.5
Unit: mm
Anode mark (φ1.6)
Device
center
(5.0)
■
Features
•
Fast response which is well suited to high speed modulated light
detection: t
r
, t
f
=
50 ns (typ.)
•
High sensitivity, high reliability
•
Peak emission wavelength matched with infrared light emitting
diodes:
λ
p
=
940 nm (typ.)
•
Wide detection area, wide half-power angle:
θ =
65° (typ.)
•
Adoption of visible light cutoff resin
8.0
±0.5
13 min.
2.3
±0.3
2-1.2
±0.15
2-0.6
±0.15
0.41
±0.15
2
1
5.08
±0.25
■
Absolute Maximum Ratings
Parameter
Reverse voltage
Power dissipation
Operating ambient temperature
Storage temperature
T
a
=
25°C
V
R
P
D
T
opr
T
stg
30
100
−30
to
+80
−40
to
+80
V
mW
°C
°C
2.8
±0.3
Symbol
Rating
Unit
1: Cathode
2: Anode
LSTFR102NC-001 Package
■
Electrical-Optical Characteristics
T
a
=
25°C
±
3°C
Parameter
Dark current
Photocurrent
Rise time
*2
Fall time
*2
Rise time
*2
Fall time
*2
Terminal capacitance
Half-power angle
*1
Symbol
I
D
I
L
λ
p
t
r
t
f
t
r
t
f
C
t
θ
V
R
=
10 V
Conditions
V
R
=
10 V, L
=
1 000 lx
V
R
=
10 V
V
R
=
10 V, R
L
=
1 kΩ
V
R
=
10 V, R
L
=
100 kΩ
V
R
=
0 V, f
=
1 MHz
The angle from which photocurrent
becomes 50%
Min
Typ
5
Max
50
Unit
nA
µA
nm
ns
ns
µs
µs
pF
°
35
50
940
50
50
5
5
70
65
Peak emission wavelength
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *1: Source: Tungsten (color temperature 2 856 K)
*2: Switching time measurement circuit
Sig. in
λ
P
=
800 nm
50
Ω
R
L
V
R
=
10 V
(Input pulse)
Sig. out
(Output pulse)
t
d
t
r
t
f
90%
10%
t
d
: Delay time
t
r
: Rise time (Time required for the collector photocurrent
to increase from 10% to 90% of its final value)
t
f
:
Fall time (Time required for the collector photocurrent
to decrease from 90% to 10% of its initial value)
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHE00033BED
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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