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2SA2005

Description
For Audio Amplifier output - TV Velosity Modulation (-160V,-1.5A)
CategoryDiscrete semiconductor    The transistor   
File Size41KB,2 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

2SA2005 Overview

For Audio Amplifier output - TV Velosity Modulation (-160V,-1.5A)

2SA2005 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codecompli
Maximum collector current (IC)1.5 A
ConfigurationSingle
Minimum DC current gain (hFE)60
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)20 W
surface mountNO
Base Number Matches1
2SA2005
Transistors
For Audio Amplifier output - TV Velosity
Modulation (−160V,
−1.5A)
2SA2005
Structure
PNP Silicon Epitaxial Planar Transistor
External dimensions
(Unit : mm)
TO-220FN
10.0
4.5
φ
3.2
2.8
Features
1) Electrical characteristics of DC current gain h
FE
is flat.
2) High breakdown voltage. (BV
CEO
=
−160V(Min.),
at I
C
=
−1mA)
3) High f
T
. (Typ. 150MHz, at V
CE
=
−10V,
I
E
=0.2A, f=100MHz)
4) Wide SOA.
(1)Base
(2)Collector
(3)Emitter
15.0
12.0
8.0
5.0
1.2
1.3
14.0
0.8
2.54
(1) (2) (3)
2.54
0.75
2.6
Applications
Power amplifier
Velosity modulation
Complements
PNP
2SA2005
NPN
2SC5511
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
160
−160
−5
−1.5
−3
2
20
150
−55
to
+150
Unit
V
V
V
A
A
∗1
Packaging specifications and h
FE
Package
Type
h
FE
2SC5511
E
Code
Basic ordering unit (pieces)
Taping
500
h
FE
values are classified as follows:
Item
h
FE
E
100 to 200
Collector power dissipation
Junction temperature
Storage temperature
∗1
t=100ms
W(Ta=25
°C
)
W(Tc=25°C)
°C
°C
Electrical characteristics
(Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
Cob
Min. Typ. Max. Unit
−160
−160
−5
100
150
35
−1.0
−1.0
−1.0
−1.5
200
V
V
V
µA
µA
V
V
pF
I
C
=
−1mA
I
C
=
−50µA
I
E
=
−50µA
V
CB
=
−160V
V
EB
=
−4V
I
C
/I
B
=
−1A/ −0.1A
I
C
/I
B
=
−1A/ −0.1A
V
CE
=
−5V,
I
C
=
−0.1A
V
CB
=
−10V
, I
E
=0A , f=1MHz
Conditions
MHz V
CE
=
−10V,
I
E
=0.2A , f=100MHz
1/1
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